Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes

InGaN/GaN multi-quantum well (MQW) light emitting diodes with heavily Mg doped and unintentionally doped (UID) low-temperature Al0.2Ga0.8N electron blocking layer (EBL) were investigated. Broad short-wavelength electroluminescence peak, which has strong relative intensity to the main emission, was f...

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Veröffentlicht in:	Applied physics letters 2014-06, Vol.104 (22)
Hauptverfasser:	Wu, Xiaoming, Liu, Junlin, Quan, Zhijue, Xiong, Chuanbing, Zheng, Changda, Zhang, Jianli, Mao, Qinghua, Jiang, Fengyi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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