Si 3 N 4 optomechanical crystals in the resolved-sideband regime
We demonstrate sideband-resolved Si3N4 optomechanical crystals supporting 105 quality factor optical modes at 980 nm, coupled to ≈4 GHz frequency mechanical modes with quality factors of ≈3000. Optomechanical electromagnetically induced transparency and absorption are observed at room temperature an...
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| Veröffentlicht in: | Applied physics letters 2014-01, Vol.104 (4) |
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| container_title | Applied physics letters |
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| creator | Davanço, M. Ates, S. Liu, Y. Srinivasan, K. |
| description | We demonstrate sideband-resolved Si3N4 optomechanical crystals supporting 105 quality factor optical modes at 980 nm, coupled to ≈4 GHz frequency mechanical modes with quality factors of ≈3000. Optomechanical electromagnetically induced transparency and absorption are observed at room temperature and in atmosphere with intracavity photon numbers in excess of 104. |
| doi_str_mv | 10.1063/1.4858975 |
| format | Article |
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| ispartof | Applied physics letters, 2014-01, Vol.104 (4) |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| title | Si 3 N 4 optomechanical crystals in the resolved-sideband regime |
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