Nucleation of in-grown stacking faults and dislocation half-loops in 4H-SiC epitaxy

Ultraviolet photoluminescence, transmission electron microscopy and KOH etching were used to characterize extended defects in 4H-SiC epilayers grown at high growth rates (18 μm/h). Layers exhibited high densities of in-grown stacking faults and dislocation half-loops. The stacking faults were 8H Sho...

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Veröffentlicht in:	Journal of applied physics 2013-09, Vol.114 (12)
Hauptverfasser:	Abadier, M., Myers-Ward, R. L., Mahadik, N. A., Stahlbush, R. E., Wheeler, V. D., Nyakiti, L. O., Eddy, C. R., Gaskill, D. K., Song, H., Sudarshan, T. S., Picard, Y. N., Skowronski, M.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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