Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions
We report on the identification of a two-electron transition for the shallow donor silicon in homoepitaxial aluminum nitride (AlN). One c-oriented sample was analyzed by low temperature photoluminescence spectroscopy on multiple excitation spots. We find a unique correlation of one single emission b...
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| Veröffentlicht in: | Applied physics letters 2013-09, Vol.103 (12) |
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| container_title | Applied physics letters |
| container_volume | 103 |
| creator | Neuschl, B. Thonke, K. Feneberg, M. Goldhahn, R. Wunderer, T. Yang, Z. Johnson, N. M. Xie, J. Mita, S. Rice, A. Collazo, R. Sitar, Z. |
| description | We report on the identification of a two-electron transition for the shallow donor silicon in homoepitaxial aluminum nitride (AlN). One c-oriented sample was analyzed by low temperature photoluminescence spectroscopy on multiple excitation spots. We find a unique correlation of one single emission band, 76.6 meV below the free excitonic emission, with the luminescence of excitons bound to neutral silicon proving the identity as a two-electron transition. The assignment is confirmed by temperature dependent photoluminescence investigations. We find a donor ionization energy of (63.5 ± 1.5) meV for silicon in AlN. |
| doi_str_mv | 10.1063/1.4821183 |
| format | Article |
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| ispartof | Applied physics letters, 2013-09, Vol.103 (12) |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions |
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