Conduction and electric field effect in ultra-thin TiN films

Conduction and electric field effect in ultra-thin TiN films

Using low pressure atomic layer deposition, ultra-thin continuous TiN films were prepared. The temperature coefficient of resistance (TCR), resistivity and field effect properties of these films were investigated. With decreasing film thickness, a positive-to-negative transition of TCR and a steep i...

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Veröffentlicht in:Applied physics letters 2013-07, Vol.103 (5)
Hauptverfasser: Van Bui, Hao, Kovalgin, Alexey Y., Schmitz, Jurriaan, Wolters, Rob A. M.
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Kovalgin, Alexey Y.
Schmitz, Jurriaan
Wolters, Rob A. M.
description Using low pressure atomic layer deposition, ultra-thin continuous TiN films were prepared. The temperature coefficient of resistance (TCR), resistivity and field effect properties of these films were investigated. With decreasing film thickness, a positive-to-negative transition of TCR and a steep increase of resistivity were observed. This is attributed to the metal-semimetal transition of the TiN films. We demonstrate appreciable field-induced current modulation up to 11% in a 0.65 nm TiN film. The field effect is remarkably independent of temperature. A polarity asymmetry of the current-voltage characteristics is found, attributed to the interplay between different types of the carriers.
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_4817007</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_4817007</sourcerecordid><originalsourceid>FETCH-LOGICAL-c295t-c5883b993816bb0d6034923cba5da1d75d5f6f001eff18a62ffc815bb0033d423</originalsourceid><addsrcrecordid>eNotj8FKxDAQhoMoWFcPvkGvHrLOdJo0AS9SdBUW97J7LmnSYKTbStI9-PZG3NPMx_8zw8fYPcIaQdIjrmuFDUBzwQqEpuGEqC5ZAQDEpRZ4zW5S-sooKqKCPbXz5E52CfNUmsmVwzjYJQZb-jCMGb3PXIapPI1LNHz5zOs-fOR4PKZbduXNmIa781yxw-vLvn3j293mvX3ecltpsXArlKJea1Io-x6cBKp1RbY3whl0jXDCSw-A-RsqIyvvrUKRq0Dk6opW7OH_ro1zSnHw3XcMRxN_OoTuT7vD7qxNvzKqSMc</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Conduction and electric field effect in ultra-thin TiN films</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Van Bui, Hao ; Kovalgin, Alexey Y. ; Schmitz, Jurriaan ; Wolters, Rob A. M.</creator><creatorcontrib>Van Bui, Hao ; Kovalgin, Alexey Y. ; Schmitz, Jurriaan ; Wolters, Rob A. M.</creatorcontrib><description>Using low pressure atomic layer deposition, ultra-thin continuous TiN films were prepared. The temperature coefficient of resistance (TCR), resistivity and field effect properties of these films were investigated. With decreasing film thickness, a positive-to-negative transition of TCR and a steep increase of resistivity were observed. This is attributed to the metal-semimetal transition of the TiN films. We demonstrate appreciable field-induced current modulation up to 11% in a 0.65 nm TiN film. The field effect is remarkably independent of temperature. A polarity asymmetry of the current-voltage characteristics is found, attributed to the interplay between different types of the carriers.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4817007</identifier><language>eng</language><ispartof>Applied physics letters, 2013-07, Vol.103 (5)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c295t-c5883b993816bb0d6034923cba5da1d75d5f6f001eff18a62ffc815bb0033d423</citedby><cites>FETCH-LOGICAL-c295t-c5883b993816bb0d6034923cba5da1d75d5f6f001eff18a62ffc815bb0033d423</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Van Bui, Hao</creatorcontrib><creatorcontrib>Kovalgin, Alexey Y.</creatorcontrib><creatorcontrib>Schmitz, Jurriaan</creatorcontrib><creatorcontrib>Wolters, Rob A. M.</creatorcontrib><title>Conduction and electric field effect in ultra-thin TiN films</title><title>Applied physics letters</title><description>Using low pressure atomic layer deposition, ultra-thin continuous TiN films were prepared. The temperature coefficient of resistance (TCR), resistivity and field effect properties of these films were investigated. With decreasing film thickness, a positive-to-negative transition of TCR and a steep increase of resistivity were observed. This is attributed to the metal-semimetal transition of the TiN films. We demonstrate appreciable field-induced current modulation up to 11% in a 0.65 nm TiN film. The field effect is remarkably independent of temperature. A polarity asymmetry of the current-voltage characteristics is found, attributed to the interplay between different types of the carriers.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNotj8FKxDAQhoMoWFcPvkGvHrLOdJo0AS9SdBUW97J7LmnSYKTbStI9-PZG3NPMx_8zw8fYPcIaQdIjrmuFDUBzwQqEpuGEqC5ZAQDEpRZ4zW5S-sooKqKCPbXz5E52CfNUmsmVwzjYJQZb-jCMGb3PXIapPI1LNHz5zOs-fOR4PKZbduXNmIa781yxw-vLvn3j293mvX3ecltpsXArlKJea1Io-x6cBKp1RbY3whl0jXDCSw-A-RsqIyvvrUKRq0Dk6opW7OH_ro1zSnHw3XcMRxN_OoTuT7vD7qxNvzKqSMc</recordid><startdate>20130729</startdate><enddate>20130729</enddate><creator>Van Bui, Hao</creator><creator>Kovalgin, Alexey Y.</creator><creator>Schmitz, Jurriaan</creator><creator>Wolters, Rob A. M.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20130729</creationdate><title>Conduction and electric field effect in ultra-thin TiN films</title><author>Van Bui, Hao ; Kovalgin, Alexey Y. ; Schmitz, Jurriaan ; Wolters, Rob A. M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c295t-c5883b993816bb0d6034923cba5da1d75d5f6f001eff18a62ffc815bb0033d423</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Van Bui, Hao</creatorcontrib><creatorcontrib>Kovalgin, Alexey Y.</creatorcontrib><creatorcontrib>Schmitz, Jurriaan</creatorcontrib><creatorcontrib>Wolters, Rob A. M.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Van Bui, Hao</au><au>Kovalgin, Alexey Y.</au><au>Schmitz, Jurriaan</au><au>Wolters, Rob A. M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Conduction and electric field effect in ultra-thin TiN films</atitle><jtitle>Applied physics letters</jtitle><date>2013-07-29</date><risdate>2013</risdate><volume>103</volume><issue>5</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Using low pressure atomic layer deposition, ultra-thin continuous TiN films were prepared. The temperature coefficient of resistance (TCR), resistivity and field effect properties of these films were investigated. With decreasing film thickness, a positive-to-negative transition of TCR and a steep increase of resistivity were observed. This is attributed to the metal-semimetal transition of the TiN films. We demonstrate appreciable field-induced current modulation up to 11% in a 0.65 nm TiN film. The field effect is remarkably independent of temperature. A polarity asymmetry of the current-voltage characteristics is found, attributed to the interplay between different types of the carriers.</abstract><doi>10.1063/1.4817007</doi></addata></record>
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title Conduction and electric field effect in ultra-thin TiN films
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T23%3A42%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Conduction%20and%20electric%20field%20effect%20in%20ultra-thin%20TiN%20films&rft.jtitle=Applied%20physics%20letters&rft.au=Van%20Bui,%20Hao&rft.date=2013-07-29&rft.volume=103&rft.issue=5&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4817007&rft_dat=%3Ccrossref%3E10_1063_1_4817007%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true