Micro-cavity 2- μ m GaSb-based semiconductor disk laser using high-reflectivity SiC heatspreader

An optically pumped GaSb-based semiconductor disk laser (SDL) emitting at 2.05 μm has been realized with a very short (380 μm long) laser cavity by high-reflectivity coating the intra-cavity SiC heatspreader, which then serves as the outcoupling mirror. Room-temperature output powers in excess of 750 mW have been demonstrated in multimode operation and still 100 mW in TEM00 emission, which is a more than 100× increase in output power compared to previous reports on GaSb-based micro-cavity (μC) SDLs. Mode-hop-free tunable single-frequency emission with linewidths