Band gap and structure of single crystal BiI3: Resolving discrepancies in literature

Bismuth tri-iodide (BiI3) is an intermediate band gap semiconductor with potential for room temperature gamma-ray detection applications. Remarkably, very different band gap characteristics and values of BiI3 have been reported in literature, which may be attributed to its complicated layered struct...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of applied physics 2013-07, Vol.114 (3)
Hauptverfasser:	Podraza, Nikolas J., Qiu, Wei, Hinojosa, Beverly B., Xu, Haixuan, Motyka, Michael A., Phillpot, Simon R., Baciak, James E., Trolier-McKinstry, Susan, Nino, Juan C.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!