Excellent retention characteristics of nanocomposite gate insulator consisting of fullerene-containing polystyrene

Excellent retention characteristics of nanocomposite gate insulator consisting of fullerene-containing polystyrene

Nanocomposite gate insulators were fabricated with functionalized fullerene in a gate insulating polymer [polystyrene (PS) or poly 4-vinyl phenol (PVP)]. An extremely long retention time was obtained for the gate insulating PS, although a larger absolute value of the programming voltage was necessar...

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Veröffentlicht in:Applied physics letters 2013-07, Vol.103 (1)
Hauptverfasser: Nakajima, Anri, Fujii, Daiki, Uchino, Masatoshi
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Fujii, Daiki
Uchino, Masatoshi
description Nanocomposite gate insulators were fabricated with functionalized fullerene in a gate insulating polymer [polystyrene (PS) or poly 4-vinyl phenol (PVP)]. An extremely long retention time was obtained for the gate insulating PS, although a larger absolute value of the programming voltage was necessary for the same flatband-voltage shift compared with PVP. The current–voltage characteristics suggested that the level of the lowest-unoccupied molecular orbital of PS was much higher than that of PVP and that this was the reason for the excellent retention characteristics of the fullerene-containing PS. Optimizing the concentration of fullerene molecules in PS will enable fabrication of a practical nanocomposite gate insulator for organic nonvolatile flash memory.
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title Excellent retention characteristics of nanocomposite gate insulator consisting of fullerene-containing polystyrene
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