Double injection in graphene p-i-n structures

Double injection in graphene p-i-n structures

We study the processes of the electron and hole injection (double injection) into the i-region of graphene-layer and multiple graphene-layer p-i-n structures at the forward bias voltages. The hydrodynamic equations governing the electron and hole transport in graphene coupled with the two-dimensiona...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2013-06, Vol.113 (24)
Hauptverfasser: Ryzhii, V., Semenikhin, I., Ryzhii, M., Svintsov, D., Vyurkov, V., Satou, A., Otsuji, T.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 24
container_start_page
container_title Journal of applied physics
container_volume 113
creator Ryzhii, V.
Semenikhin, I.
Ryzhii, M.
Svintsov, D.
Vyurkov, V.
Satou, A.
Otsuji, T.
description We study the processes of the electron and hole injection (double injection) into the i-region of graphene-layer and multiple graphene-layer p-i-n structures at the forward bias voltages. The hydrodynamic equations governing the electron and hole transport in graphene coupled with the two-dimensional Poisson equation are employed. Using analytical and numerical solutions of the equations of the model, we calculate the band edge profile, the spatial distributions of the quasi-Fermi energies, carrier density and velocity, and the current-voltage characteristics. In particular, we demonstrated that the electron and hole collisions can strongly affect these distributions. The obtained results can be used for the realization and optimization of graphene-based injection terahertz and infrared lasers.
doi_str_mv 10.1063/1.4812494
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_4812494</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_4812494</sourcerecordid><originalsourceid>FETCH-LOGICAL-c295t-51440b7e09a0e4d0d45c9f1ac110e0652d3833c2e0c82146a563416d7608fe583</originalsourceid><addsrcrecordid>eNotjz1PwzAUAC0EEqEw8A-yMri8Zz879ojKp1SJBWbLdV4gVUkiOxn494DodDeddEJcI6wRrL7FNTlU5OlEVAjOy8YYOBUVgELpfOPPxUUpewBEp30l5P247A5c98Oe09yPw6_VHzlOnzxwPcleDnWZ85LmJXO5FGddPBS-OnIl3h8f3jbPcvv69LK528qkvJmlQSLYNQw-AlMLLZnkO4wJERisUa12WifFkJxCstFYTWjbxoLr2Di9Ejf_3ZTHUjJ3Ycr9V8zfASH8fQYMx0_9A0qgQsA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Double injection in graphene p-i-n structures</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Ryzhii, V. ; Semenikhin, I. ; Ryzhii, M. ; Svintsov, D. ; Vyurkov, V. ; Satou, A. ; Otsuji, T.</creator><creatorcontrib>Ryzhii, V. ; Semenikhin, I. ; Ryzhii, M. ; Svintsov, D. ; Vyurkov, V. ; Satou, A. ; Otsuji, T.</creatorcontrib><description>We study the processes of the electron and hole injection (double injection) into the i-region of graphene-layer and multiple graphene-layer p-i-n structures at the forward bias voltages. The hydrodynamic equations governing the electron and hole transport in graphene coupled with the two-dimensional Poisson equation are employed. Using analytical and numerical solutions of the equations of the model, we calculate the band edge profile, the spatial distributions of the quasi-Fermi energies, carrier density and velocity, and the current-voltage characteristics. In particular, we demonstrated that the electron and hole collisions can strongly affect these distributions. The obtained results can be used for the realization and optimization of graphene-based injection terahertz and infrared lasers.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4812494</identifier><language>eng</language><ispartof>Journal of applied physics, 2013-06, Vol.113 (24)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c295t-51440b7e09a0e4d0d45c9f1ac110e0652d3833c2e0c82146a563416d7608fe583</citedby><cites>FETCH-LOGICAL-c295t-51440b7e09a0e4d0d45c9f1ac110e0652d3833c2e0c82146a563416d7608fe583</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Ryzhii, V.</creatorcontrib><creatorcontrib>Semenikhin, I.</creatorcontrib><creatorcontrib>Ryzhii, M.</creatorcontrib><creatorcontrib>Svintsov, D.</creatorcontrib><creatorcontrib>Vyurkov, V.</creatorcontrib><creatorcontrib>Satou, A.</creatorcontrib><creatorcontrib>Otsuji, T.</creatorcontrib><title>Double injection in graphene p-i-n structures</title><title>Journal of applied physics</title><description>We study the processes of the electron and hole injection (double injection) into the i-region of graphene-layer and multiple graphene-layer p-i-n structures at the forward bias voltages. The hydrodynamic equations governing the electron and hole transport in graphene coupled with the two-dimensional Poisson equation are employed. Using analytical and numerical solutions of the equations of the model, we calculate the band edge profile, the spatial distributions of the quasi-Fermi energies, carrier density and velocity, and the current-voltage characteristics. In particular, we demonstrated that the electron and hole collisions can strongly affect these distributions. The obtained results can be used for the realization and optimization of graphene-based injection terahertz and infrared lasers.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNotjz1PwzAUAC0EEqEw8A-yMri8Zz879ojKp1SJBWbLdV4gVUkiOxn494DodDeddEJcI6wRrL7FNTlU5OlEVAjOy8YYOBUVgELpfOPPxUUpewBEp30l5P247A5c98Oe09yPw6_VHzlOnzxwPcleDnWZ85LmJXO5FGddPBS-OnIl3h8f3jbPcvv69LK528qkvJmlQSLYNQw-AlMLLZnkO4wJERisUa12WifFkJxCstFYTWjbxoLr2Di9Ejf_3ZTHUjJ3Ycr9V8zfASH8fQYMx0_9A0qgQsA</recordid><startdate>20130628</startdate><enddate>20130628</enddate><creator>Ryzhii, V.</creator><creator>Semenikhin, I.</creator><creator>Ryzhii, M.</creator><creator>Svintsov, D.</creator><creator>Vyurkov, V.</creator><creator>Satou, A.</creator><creator>Otsuji, T.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20130628</creationdate><title>Double injection in graphene p-i-n structures</title><author>Ryzhii, V. ; Semenikhin, I. ; Ryzhii, M. ; Svintsov, D. ; Vyurkov, V. ; Satou, A. ; Otsuji, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c295t-51440b7e09a0e4d0d45c9f1ac110e0652d3833c2e0c82146a563416d7608fe583</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ryzhii, V.</creatorcontrib><creatorcontrib>Semenikhin, I.</creatorcontrib><creatorcontrib>Ryzhii, M.</creatorcontrib><creatorcontrib>Svintsov, D.</creatorcontrib><creatorcontrib>Vyurkov, V.</creatorcontrib><creatorcontrib>Satou, A.</creatorcontrib><creatorcontrib>Otsuji, T.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ryzhii, V.</au><au>Semenikhin, I.</au><au>Ryzhii, M.</au><au>Svintsov, D.</au><au>Vyurkov, V.</au><au>Satou, A.</au><au>Otsuji, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Double injection in graphene p-i-n structures</atitle><jtitle>Journal of applied physics</jtitle><date>2013-06-28</date><risdate>2013</risdate><volume>113</volume><issue>24</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>We study the processes of the electron and hole injection (double injection) into the i-region of graphene-layer and multiple graphene-layer p-i-n structures at the forward bias voltages. The hydrodynamic equations governing the electron and hole transport in graphene coupled with the two-dimensional Poisson equation are employed. Using analytical and numerical solutions of the equations of the model, we calculate the band edge profile, the spatial distributions of the quasi-Fermi energies, carrier density and velocity, and the current-voltage characteristics. In particular, we demonstrated that the electron and hole collisions can strongly affect these distributions. The obtained results can be used for the realization and optimization of graphene-based injection terahertz and infrared lasers.</abstract><doi>10.1063/1.4812494</doi></addata></record>
fulltext fulltext
identifier ISSN: 0021-8979
ispartof Journal of applied physics, 2013-06, Vol.113 (24)
issn 0021-8979
1089-7550
language eng
recordid cdi_crossref_primary_10_1063_1_4812494
source AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection
title Double injection in graphene p-i-n structures
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-22T22%3A41%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Double%20injection%20in%20graphene%20p-i-n%20structures&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Ryzhii,%20V.&rft.date=2013-06-28&rft.volume=113&rft.issue=24&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.4812494&rft_dat=%3Ccrossref%3E10_1063_1_4812494%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true