Memory cell based on a φ Josephson junction

The φ Josephson junction has a doubly degenerate ground state with the Josephson phases ±φ. We demonstrate the use of such a φ Josephson junction as a memory cell (classical bit), where writing is done by applying a magnetic field and reading by applying a bias current. In the “store” state, the jun...

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Veröffentlicht in:Applied physics letters 2013-06, Vol.102 (24)
Hauptverfasser: Goldobin, E., Sickinger, H., Weides, M., Ruppelt, N., Kohlstedt, H., Kleiner, R., Koelle, D.
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container_issue 24
container_start_page
container_title Applied physics letters
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creator Goldobin, E.
Sickinger, H.
Weides, M.
Ruppelt, N.
Kohlstedt, H.
Kleiner, R.
Koelle, D.
description The φ Josephson junction has a doubly degenerate ground state with the Josephson phases ±φ. We demonstrate the use of such a φ Josephson junction as a memory cell (classical bit), where writing is done by applying a magnetic field and reading by applying a bias current. In the “store” state, the junction does not require any bias or magnetic field, but just needs to stay cooled for permanent storage of the logical bit. Straightforward integration with rapid single flux quantum logic is possible.
doi_str_mv 10.1063/1.4811752
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_4811752</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_4811752</sourcerecordid><originalsourceid>FETCH-LOGICAL-c264t-d56951d20a117e17552b7cccc5be3bc74215bd780c22f4c501a0bb36b3dcc0eb3</originalsourceid><addsrcrecordid>eNotjz1OAzEUhC0EEkug4AZukXDynt96vZQoggBKRAO15b8ViTa7kR2KXIDrcSUckWlG08x8w9gtwhShoRlO6xZRK3nGKgStBSG256wCABLNg8JLdpXzpkQliSp2v4rbMR24j33Pnc0x8HHglv_-8Lcxx91XLnHzPfj9ehyu2UVn-xxvTj5hn89PH_MXsXxfvM4fl8LLpt6LoI5DQYItJLHAKOm0L1IukvO6lqhc0C14KbvaK0ALzlHjKHgP0dGE3f33-jTmnGJndmm9telgEMzxpkFzukl_RolDyg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Memory cell based on a φ Josephson junction</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Goldobin, E. ; Sickinger, H. ; Weides, M. ; Ruppelt, N. ; Kohlstedt, H. ; Kleiner, R. ; Koelle, D.</creator><creatorcontrib>Goldobin, E. ; Sickinger, H. ; Weides, M. ; Ruppelt, N. ; Kohlstedt, H. ; Kleiner, R. ; Koelle, D.</creatorcontrib><description>The φ Josephson junction has a doubly degenerate ground state with the Josephson phases ±φ. We demonstrate the use of such a φ Josephson junction as a memory cell (classical bit), where writing is done by applying a magnetic field and reading by applying a bias current. In the “store” state, the junction does not require any bias or magnetic field, but just needs to stay cooled for permanent storage of the logical bit. Straightforward integration with rapid single flux quantum logic is possible.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4811752</identifier><language>eng</language><ispartof>Applied physics letters, 2013-06, Vol.102 (24)</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c264t-d56951d20a117e17552b7cccc5be3bc74215bd780c22f4c501a0bb36b3dcc0eb3</citedby><cites>FETCH-LOGICAL-c264t-d56951d20a117e17552b7cccc5be3bc74215bd780c22f4c501a0bb36b3dcc0eb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,27911,27912</link.rule.ids></links><search><creatorcontrib>Goldobin, E.</creatorcontrib><creatorcontrib>Sickinger, H.</creatorcontrib><creatorcontrib>Weides, M.</creatorcontrib><creatorcontrib>Ruppelt, N.</creatorcontrib><creatorcontrib>Kohlstedt, H.</creatorcontrib><creatorcontrib>Kleiner, R.</creatorcontrib><creatorcontrib>Koelle, D.</creatorcontrib><title>Memory cell based on a φ Josephson junction</title><title>Applied physics letters</title><description>The φ Josephson junction has a doubly degenerate ground state with the Josephson phases ±φ. We demonstrate the use of such a φ Josephson junction as a memory cell (classical bit), where writing is done by applying a magnetic field and reading by applying a bias current. In the “store” state, the junction does not require any bias or magnetic field, but just needs to stay cooled for permanent storage of the logical bit. Straightforward integration with rapid single flux quantum logic is possible.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNotjz1OAzEUhC0EEkug4AZukXDynt96vZQoggBKRAO15b8ViTa7kR2KXIDrcSUckWlG08x8w9gtwhShoRlO6xZRK3nGKgStBSG256wCABLNg8JLdpXzpkQliSp2v4rbMR24j33Pnc0x8HHglv_-8Lcxx91XLnHzPfj9ehyu2UVn-xxvTj5hn89PH_MXsXxfvM4fl8LLpt6LoI5DQYItJLHAKOm0L1IukvO6lqhc0C14KbvaK0ALzlHjKHgP0dGE3f33-jTmnGJndmm9telgEMzxpkFzukl_RolDyg</recordid><startdate>20130617</startdate><enddate>20130617</enddate><creator>Goldobin, E.</creator><creator>Sickinger, H.</creator><creator>Weides, M.</creator><creator>Ruppelt, N.</creator><creator>Kohlstedt, H.</creator><creator>Kleiner, R.</creator><creator>Koelle, D.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20130617</creationdate><title>Memory cell based on a φ Josephson junction</title><author>Goldobin, E. ; Sickinger, H. ; Weides, M. ; Ruppelt, N. ; Kohlstedt, H. ; Kleiner, R. ; Koelle, D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c264t-d56951d20a117e17552b7cccc5be3bc74215bd780c22f4c501a0bb36b3dcc0eb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Goldobin, E.</creatorcontrib><creatorcontrib>Sickinger, H.</creatorcontrib><creatorcontrib>Weides, M.</creatorcontrib><creatorcontrib>Ruppelt, N.</creatorcontrib><creatorcontrib>Kohlstedt, H.</creatorcontrib><creatorcontrib>Kleiner, R.</creatorcontrib><creatorcontrib>Koelle, D.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Goldobin, E.</au><au>Sickinger, H.</au><au>Weides, M.</au><au>Ruppelt, N.</au><au>Kohlstedt, H.</au><au>Kleiner, R.</au><au>Koelle, D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Memory cell based on a φ Josephson junction</atitle><jtitle>Applied physics letters</jtitle><date>2013-06-17</date><risdate>2013</risdate><volume>102</volume><issue>24</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The φ Josephson junction has a doubly degenerate ground state with the Josephson phases ±φ. We demonstrate the use of such a φ Josephson junction as a memory cell (classical bit), where writing is done by applying a magnetic field and reading by applying a bias current. In the “store” state, the junction does not require any bias or magnetic field, but just needs to stay cooled for permanent storage of the logical bit. Straightforward integration with rapid single flux quantum logic is possible.</abstract><doi>10.1063/1.4811752</doi><oa>free_for_read</oa></addata></record>
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title Memory cell based on a φ Josephson junction
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T05%3A38%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Memory%20cell%20based%20on%20a%20%CF%86%20Josephson%20junction&rft.jtitle=Applied%20physics%20letters&rft.au=Goldobin,%20E.&rft.date=2013-06-17&rft.volume=102&rft.issue=24&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4811752&rft_dat=%3Ccrossref%3E10_1063_1_4811752%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true