Enhanced interface perpendicular magnetic anisotropy in Ta|CoFeB|MgO using nitrogen doped Ta underlayers
We show that the magnetic characteristics of Ta|CoFeB|MgO magnetic heterostructures are strongly influenced by doping the Ta underlayer with nitrogen. In particular, the saturation magnetization drops upon doping the Ta underlayer, suggesting that the doped underlayer acts as a boron diffusion barri...
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| Veröffentlicht in: | Applied physics letters 2013-06, Vol.102 (24) |
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| container_title | Applied physics letters |
| container_volume | 102 |
| creator | Sinha, Jaivardhan Hayashi, Masamitsu Kellock, Andrew J. Fukami, Shunsuke Yamanouchi, Michihiko Sato, Hideo Ikeda, Shoji Mitani, Seiji Yang, See-hun Parkin, Stuart S. P. Ohno, Hideo |
| description | We show that the magnetic characteristics of Ta|CoFeB|MgO magnetic heterostructures are strongly influenced by doping the Ta underlayer with nitrogen. In particular, the saturation magnetization drops upon doping the Ta underlayer, suggesting that the doped underlayer acts as a boron diffusion barrier. In addition, the thickness of the magnetic dead layer decreases with increasing nitrogen doping. Surprisingly, the interface magnetic anisotropy increases to ∼1.8 erg/cm2 when an optimum amount of nitrogen is introduced into the Ta underlayer. These results show that nitrogen doped Ta serves as a good underlayer for spintronic applications including magnetic tunnel junctions and domain wall devices. |
| doi_str_mv | 10.1063/1.4811269 |
| format | Article |
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| ispartof | Applied physics letters, 2013-06, Vol.102 (24) |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Enhanced interface perpendicular magnetic anisotropy in Ta|CoFeB|MgO using nitrogen doped Ta underlayers |
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