Study of viscoplastic deformation in porous organosilicate thin films for ultra low-k applications

This letter reports experimental observations evidencing the viscoplasticity of porous organosilicate glass thin films under conditions pertinent to their application in advanced low-k/Cu interconnect technology. Specifically, it is found that porous SiCOH thin films exhibit a significant level of v...

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Veröffentlicht in:Applied physics letters 2013-06, Vol.102 (22)
Hauptverfasser: Zin, Emil H., Bang, W. H., Todd Ryan, E., King, Sean W., Kim, Choong-Un
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container_issue 22
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container_title Applied physics letters
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creator Zin, Emil H.
Bang, W. H.
Todd Ryan, E.
King, Sean W.
Kim, Choong-Un
description This letter reports experimental observations evidencing the viscoplasticity of porous organosilicate glass thin films under conditions pertinent to their application in advanced low-k/Cu interconnect technology. Specifically, it is found that porous SiCOH thin films exhibit a significant level of viscoplasticity with a rate sensitive to the porosity, the degree of plasma damage, and hydration reaction when tested using a ball indenter at 150–400 °C. The activation energy of the viscosity (1.25–1.45 eV) is measured to be far lower than the bulk glass (>4 eV), suggesting that the viscous flow is affected by the presence of defective bond-network such as Si–OH or Si–H bonds.
doi_str_mv 10.1063/1.4809827
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_4809827</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_4809827</sourcerecordid><originalsourceid>FETCH-LOGICAL-c229t-785496685c3ef50b360ed18df35e1bd36920138f35e97eb2fadf97bb14427b9b3</originalsourceid><addsrcrecordid>eNotkMFOxCAYhInRxLp68A24eujKD22Bo9moa7KJB_XcQAFF29IA1ezb29U9TSbzzRwGoWsgayANu4V1JYgUlJ-gAgjnJQMQp6gghLCykTWco4uUPhdbU8YKpF_ybPY4OPztUxemXqXsO2ysC3FQ2YcR-xFPIYY54RDf1RiS732nssX5Y4mc74eEFxrPfY4K9-Gn_MJqmv6gpZ8u0ZlTfbJXR12ht4f718223D0_Pm3udmVHqcwlF3Ulm0bUHbOuJpo1xBoQxrHagjaskZQAEwcrudXUKeMk1xqqinItNVuhm__dLoaUonXtFP2g4r4F0h7OaaE9nsN-AXTOWIc</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Study of viscoplastic deformation in porous organosilicate thin films for ultra low-k applications</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Zin, Emil H. ; Bang, W. H. ; Todd Ryan, E. ; King, Sean W. ; Kim, Choong-Un</creator><creatorcontrib>Zin, Emil H. ; Bang, W. H. ; Todd Ryan, E. ; King, Sean W. ; Kim, Choong-Un</creatorcontrib><description>This letter reports experimental observations evidencing the viscoplasticity of porous organosilicate glass thin films under conditions pertinent to their application in advanced low-k/Cu interconnect technology. Specifically, it is found that porous SiCOH thin films exhibit a significant level of viscoplasticity with a rate sensitive to the porosity, the degree of plasma damage, and hydration reaction when tested using a ball indenter at 150–400 °C. The activation energy of the viscosity (1.25–1.45 eV) is measured to be far lower than the bulk glass (&gt;4 eV), suggesting that the viscous flow is affected by the presence of defective bond-network such as Si–OH or Si–H bonds.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4809827</identifier><language>eng</language><ispartof>Applied physics letters, 2013-06, Vol.102 (22)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c229t-785496685c3ef50b360ed18df35e1bd36920138f35e97eb2fadf97bb14427b9b3</citedby><cites>FETCH-LOGICAL-c229t-785496685c3ef50b360ed18df35e1bd36920138f35e97eb2fadf97bb14427b9b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Zin, Emil H.</creatorcontrib><creatorcontrib>Bang, W. H.</creatorcontrib><creatorcontrib>Todd Ryan, E.</creatorcontrib><creatorcontrib>King, Sean W.</creatorcontrib><creatorcontrib>Kim, Choong-Un</creatorcontrib><title>Study of viscoplastic deformation in porous organosilicate thin films for ultra low-k applications</title><title>Applied physics letters</title><description>This letter reports experimental observations evidencing the viscoplasticity of porous organosilicate glass thin films under conditions pertinent to their application in advanced low-k/Cu interconnect technology. Specifically, it is found that porous SiCOH thin films exhibit a significant level of viscoplasticity with a rate sensitive to the porosity, the degree of plasma damage, and hydration reaction when tested using a ball indenter at 150–400 °C. The activation energy of the viscosity (1.25–1.45 eV) is measured to be far lower than the bulk glass (&gt;4 eV), suggesting that the viscous flow is affected by the presence of defective bond-network such as Si–OH or Si–H bonds.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNotkMFOxCAYhInRxLp68A24eujKD22Bo9moa7KJB_XcQAFF29IA1ezb29U9TSbzzRwGoWsgayANu4V1JYgUlJ-gAgjnJQMQp6gghLCykTWco4uUPhdbU8YKpF_ybPY4OPztUxemXqXsO2ysC3FQ2YcR-xFPIYY54RDf1RiS732nssX5Y4mc74eEFxrPfY4K9-Gn_MJqmv6gpZ8u0ZlTfbJXR12ht4f718223D0_Pm3udmVHqcwlF3Ulm0bUHbOuJpo1xBoQxrHagjaskZQAEwcrudXUKeMk1xqqinItNVuhm__dLoaUonXtFP2g4r4F0h7OaaE9nsN-AXTOWIc</recordid><startdate>20130603</startdate><enddate>20130603</enddate><creator>Zin, Emil H.</creator><creator>Bang, W. H.</creator><creator>Todd Ryan, E.</creator><creator>King, Sean W.</creator><creator>Kim, Choong-Un</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20130603</creationdate><title>Study of viscoplastic deformation in porous organosilicate thin films for ultra low-k applications</title><author>Zin, Emil H. ; Bang, W. H. ; Todd Ryan, E. ; King, Sean W. ; Kim, Choong-Un</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c229t-785496685c3ef50b360ed18df35e1bd36920138f35e97eb2fadf97bb14427b9b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zin, Emil H.</creatorcontrib><creatorcontrib>Bang, W. H.</creatorcontrib><creatorcontrib>Todd Ryan, E.</creatorcontrib><creatorcontrib>King, Sean W.</creatorcontrib><creatorcontrib>Kim, Choong-Un</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zin, Emil H.</au><au>Bang, W. H.</au><au>Todd Ryan, E.</au><au>King, Sean W.</au><au>Kim, Choong-Un</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study of viscoplastic deformation in porous organosilicate thin films for ultra low-k applications</atitle><jtitle>Applied physics letters</jtitle><date>2013-06-03</date><risdate>2013</risdate><volume>102</volume><issue>22</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>This letter reports experimental observations evidencing the viscoplasticity of porous organosilicate glass thin films under conditions pertinent to their application in advanced low-k/Cu interconnect technology. Specifically, it is found that porous SiCOH thin films exhibit a significant level of viscoplasticity with a rate sensitive to the porosity, the degree of plasma damage, and hydration reaction when tested using a ball indenter at 150–400 °C. The activation energy of the viscosity (1.25–1.45 eV) is measured to be far lower than the bulk glass (&gt;4 eV), suggesting that the viscous flow is affected by the presence of defective bond-network such as Si–OH or Si–H bonds.</abstract><doi>10.1063/1.4809827</doi></addata></record>
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title Study of viscoplastic deformation in porous organosilicate thin films for ultra low-k applications
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T07%3A03%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Study%20of%20viscoplastic%20deformation%20in%20porous%20organosilicate%20thin%20films%20for%20ultra%20low-k%20applications&rft.jtitle=Applied%20physics%20letters&rft.au=Zin,%20Emil%20H.&rft.date=2013-06-03&rft.volume=102&rft.issue=22&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4809827&rft_dat=%3Ccrossref%3E10_1063_1_4809827%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true