Radiation hardness of graphene and MoS2 field effect devices against swift heavy ion irradiation

We have investigated the deterioration of field effect transistors based on two-dimensional materials due to irradiation with swift heavy ions. Devices were prepared with exfoliated single layers of MoS2 and graphene, respectively. They were characterized before and after irradiation with 1.14 GeV U...

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Veröffentlicht in:	Journal of applied physics 2013-06, Vol.113 (21)
Hauptverfasser:	Ochedowski, O., Marinov, K., Wilbs, G., Keller, G., Scheuschner, N., Severin, D., Bender, M., Maultzsch, J., Tegude, F. J., Schleberger, M.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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