Radiation hardness of graphene and MoS2 field effect devices against swift heavy ion irradiation
We have investigated the deterioration of field effect transistors based on two-dimensional materials due to irradiation with swift heavy ions. Devices were prepared with exfoliated single layers of MoS2 and graphene, respectively. They were characterized before and after irradiation with 1.14 GeV U...
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| Veröffentlicht in: | Journal of applied physics 2013-06, Vol.113 (21) |
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| container_title | Journal of applied physics |
| container_volume | 113 |
| creator | Ochedowski, O. Marinov, K. Wilbs, G. Keller, G. Scheuschner, N. Severin, D. Bender, M. Maultzsch, J. Tegude, F. J. Schleberger, M. |
| description | We have investigated the deterioration of field effect transistors based on two-dimensional materials due to irradiation with swift heavy ions. Devices were prepared with exfoliated single layers of MoS2 and graphene, respectively. They were characterized before and after irradiation with 1.14 GeV U28+ ions using three different fluences. By electrical characterization, atomic force microscopy, and Raman spectroscopy, we show that the irradiation leads to significant changes of structural and electrical properties. At the highest fluence of 4 × 1011 ions/cm2, the MoS2 transistor is destroyed, while the graphene based device remains operational, albeit with an inferior performance. |
| doi_str_mv | 10.1063/1.4808460 |
| format | Article |
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Devices were prepared with exfoliated single layers of MoS2 and graphene, respectively. They were characterized before and after irradiation with 1.14 GeV U28+ ions using three different fluences. By electrical characterization, atomic force microscopy, and Raman spectroscopy, we show that the irradiation leads to significant changes of structural and electrical properties. At the highest fluence of 4 × 1011 ions/cm2, the MoS2 transistor is destroyed, while the graphene based device remains operational, albeit with an inferior performance.</abstract><doi>10.1063/1.4808460</doi></addata></record> |
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| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2013-06, Vol.113 (21) |
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| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Radiation hardness of graphene and MoS2 field effect devices against swift heavy ion irradiation |
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