Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold

The high intensity of light emitted in InxGa1−xN/GaN heterostructures has been generally attributed to the formation of indium-rich clusters in InxGa1−xN quantum wells (QWs). However, there is significant disagreement about the existence of such clusters in as-grown InxGa1−xN QWs. We employ atomical...

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Veröffentlicht in:	Applied Physics Letters 2013-05, Vol.102 (19)
Hauptverfasser:	Baloch, Kamal H., Johnston-Peck, Aaron C., Kisslinger, Kim, Stach, Eric A., Gradečak, Silvija
Format:	Artikel
Sprache:	eng
Schlagworte:	solar (photovoltaic), solid state lighting, photosynthesis (natural and artificial), charge transport, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)
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