Trap levels in the atomic layer deposition-ZnO/GaN heterojunction—Thermal admittance spectroscopy studies
In this work, a n-ZnO/p-GaN heterojunction is analyzed using admittance spectroscopy techniques. Capacitance transient measurements performed at 10 kHz reveal four majority-carrier deep levels, the most important one located at approximately 0.57 eV below the ZnO conduction band (CB) edge with a den...
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| Veröffentlicht in: | Journal of applied physics 2013-05, Vol.113 (19) |
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| container_title | Journal of applied physics |
| container_volume | 113 |
| creator | Krajewski, Tomasz A. Stallinga, Peter Zielony, Eunika Goscinski, Krzysztof Kruszewski, Piotr Wachnicki, Lukasz Aschenbrenner, Timo Hommel, Detlef Guziewicz, Elzbieta Godlewski, Marek |
| description | In this work, a n-ZnO/p-GaN heterojunction is analyzed using admittance spectroscopy techniques. Capacitance transient measurements performed at 10 kHz reveal four majority-carrier deep levels, the most important one located at approximately 0.57 eV below the ZnO conduction band (CB) edge with a density about two orders of magnitude below the doping level (NT = 4 × 1015 cm−3). The others, located at 0.20 eV, 0.65 eV, and 0.73 eV, are about three orders of magnitude below the doping level (NT = 4–9 × 1014 cm−3). |
| doi_str_mv | 10.1063/1.4805655 |
| format | Article |
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Capacitance transient measurements performed at 10 kHz reveal four majority-carrier deep levels, the most important one located at approximately 0.57 eV below the ZnO conduction band (CB) edge with a density about two orders of magnitude below the doping level (NT = 4 × 1015 cm−3). 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| title | Trap levels in the atomic layer deposition-ZnO/GaN heterojunction—Thermal admittance spectroscopy studies |
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