Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study

We investigate germanium-tin alloy (Ge1−xSnx) as a material for the design of tunneling field-effect transistor (TFET) operating at low supply voltages. Compared with Ge, Ge1−xSnx has a smaller band-gap. The reported band-gap of Ge0.89Sn0.11 is 0.477 eV, ∼28% smaller than that of Ge. More importantl...

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Veröffentlicht in:	Journal of applied physics 2013-05, Vol.113 (19)
Hauptverfasser:	Yang, Yue, Lu Low, Kain, Wang, Wei, Guo, Pengfei, Wang, Lanxiang, Han, Genquan, Yeo, Yee-Chia
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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