Thin Ni film on graphene current spreading layer for GaN-based blue and ultra-violet light-emitting diodes

Thin Ni film on graphene current spreading layer for GaN-based blue and ultra-violet light-emitting diodes

We introduced a thin nickel (Ni) film onto graphene as a current spreading layer for GaN-based blue and ultraviolet (UV) light emitting diodes (LEDs). The thin Ni film was confirmed to improve the electrical properties of the graphene by reducing the sheet and contact resistances. The advantages of...

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Veröffentlicht in:Applied physics letters 2013-04, Vol.102 (15)
Hauptverfasser: Shim, Jae-Phil, Hoon Seo, Tae, Min, Jung-Hong, Mo Kang, Chang, Suh, Eun-Kyung, Lee, Dong-Seon
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container_issue 15
container_start_page
container_title Applied physics letters
container_volume 102
creator Shim, Jae-Phil
Hoon Seo, Tae
Min, Jung-Hong
Mo Kang, Chang
Suh, Eun-Kyung
Lee, Dong-Seon
description We introduced a thin nickel (Ni) film onto graphene as a current spreading layer for GaN-based blue and ultraviolet (UV) light emitting diodes (LEDs). The thin Ni film was confirmed to improve the electrical properties of the graphene by reducing the sheet and contact resistances. The advantages of Ni on graphene were more remarkable in UV LEDs, in which the operation voltage was reduced from 13.2 V for graphene alone to 7.1 V. As a result, UV LEDs with Ni on graphene showed a uniform and reliable light emission, at ∼83% of electroluminescence of indium tin oxide.
doi_str_mv 10.1063/1.4802800
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title Thin Ni film on graphene current spreading layer for GaN-based blue and ultra-violet light-emitting diodes
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