Defect-induced performance degradation of 4H-SiC Schottky barrier diode particle detectors

The formation and evolution of defects in 4H-SiC Schottky barrier diode high-energy particle detectors have been investigated and correlated with the detectors' properties. Low temperature annealing at 300 °C is found to significantly recover the charge collection efficiency as degraded by 1 Me...

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Veröffentlicht in:	Journal of applied physics 2013-04, Vol.113 (14)
Hauptverfasser:	Iwamoto, N., Johnson, B. C., Hoshino, N., Ito, M., Tsuchida, H., Kojima, K., Ohshima, T.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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