Bulk silicon as photonic dynamic infrared scene projector

Bulk silicon as photonic dynamic infrared scene projector

A Si-based fast (frame rate >1 kHz), large-scale (scene area 100 cm2), broadband (3–12 μm), dynamic contactless infrared (IR) scene projector is demonstrated. An IR movie appears on a scene because of the conversion of a visible scenario projected at a scene kept at elevated temperature. Light do...

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Veröffentlicht in:Applied physics letters 2013-04, Vol.102 (13)
Hauptverfasser: Malyutenko, V. K., Bogatyrenko, V. V., Malyutenko, O. Yu
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creator Malyutenko, V. K.
Bogatyrenko, V. V.
Malyutenko, O. Yu
description A Si-based fast (frame rate >1 kHz), large-scale (scene area 100 cm2), broadband (3–12 μm), dynamic contactless infrared (IR) scene projector is demonstrated. An IR movie appears on a scene because of the conversion of a visible scenario projected at a scene kept at elevated temperature. Light down conversion comes as a result of free carrier generation in a bulk Si scene followed by modulation of its thermal emission output in the spectral band of free carrier absorption. The experimental setup, an IR movie, figures of merit, and the process's advantages in comparison to other projector technologies are discussed.
doi_str_mv 10.1063/1.4800936
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title Bulk silicon as photonic dynamic infrared scene projector
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