Bulk silicon as photonic dynamic infrared scene projector

A Si-based fast (frame rate >1 kHz), large-scale (scene area 100 cm2), broadband (3–12 μm), dynamic contactless infrared (IR) scene projector is demonstrated. An IR movie appears on a scene because of the conversion of a visible scenario projected at a scene kept at elevated temperature. Light do...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2013-04, Vol.102 (13)
Hauptverfasser: Malyutenko, V. K., Bogatyrenko, V. V., Malyutenko, O. Yu
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A Si-based fast (frame rate >1 kHz), large-scale (scene area 100 cm2), broadband (3–12 μm), dynamic contactless infrared (IR) scene projector is demonstrated. An IR movie appears on a scene because of the conversion of a visible scenario projected at a scene kept at elevated temperature. Light down conversion comes as a result of free carrier generation in a bulk Si scene followed by modulation of its thermal emission output in the spectral band of free carrier absorption. The experimental setup, an IR movie, figures of merit, and the process's advantages in comparison to other projector technologies are discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4800936