Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2

By fabricating and characterizing multi-layered MoS2-based field-effect transistors in a four terminal configuration, we demonstrate that the two terminal-configurations tend to underestimate the carrier mobility μ due to the Schottky barriers at the contacts. For a back-gated two-terminal configura...

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Veröffentlicht in:	Applied physics letters 2013-03, Vol.102 (12)
Hauptverfasser:	Pradhan, N. R., Rhodes, D., Zhang, Q., Talapatra, S., Terrones, M., Ajayan, P. M., Balicas, L.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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