Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2
By fabricating and characterizing multi-layered MoS2-based field-effect transistors in a four terminal configuration, we demonstrate that the two terminal-configurations tend to underestimate the carrier mobility μ due to the Schottky barriers at the contacts. For a back-gated two-terminal configura...
Gespeichert in:
Veröffentlicht in: | Applied physics letters 2013-03, Vol.102 (12) |
---|---|
Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | 12 |
container_start_page | |
container_title | Applied physics letters |
container_volume | 102 |
creator | Pradhan, N. R. Rhodes, D. Zhang, Q. Talapatra, S. Terrones, M. Ajayan, P. M. Balicas, L. |
description | By fabricating and characterizing multi-layered MoS2-based field-effect transistors in a four terminal configuration, we demonstrate that the two terminal-configurations tend to underestimate the carrier mobility μ due to the Schottky barriers at the contacts. For a back-gated two-terminal configuration, we observe mobilities as high as 91 cm2 V−1 s−1 which is considerably smaller than 306.5 cm2 V−1 s−1 as extracted from the same device when using a four-terminal configuration. This indicates that the intrinsic mobility of MoS2 on SiO2 is significantly larger than the values previously reported, and provides a quantitative method to evaluate the charge transport through the contacts. |
doi_str_mv | 10.1063/1.4799172 |
format | Article |
fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_4799172</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_4799172</sourcerecordid><originalsourceid>FETCH-LOGICAL-c295t-64df72b7dad4eefbbf070991fa3b1586e642dc96186f89f6648ed3e043ff9dd43</originalsourceid><addsrcrecordid>eNotkM1KAzEYRYMoOFYXvkG2LlLzN8lkKUVtoVKkuh4yk--DyPxIEhd9e0fs6nIX93A5hNwLvhbcqEex1tY5YeUFqQS3likhmktScc4VM64W1-Qm56-l1lKpirzvppLilGNPe59ShETHuYtDLCc6Ix1_hhLZ4E-QINC3-SgpRhgCA0ToCy3JL9tc5pTpPNFjPMhbcoV-yHB3zhX5fHn-2GzZ_vC62zztWS9dXZjRAa3sbPBBA2DXIbd8eY5edaJuDBgtQ--MaAw2Do3RDQQFXCtEF4JWK_Lwz-3TnHMCbL9THH06tYK3fy5a0Z5dqF9FXVGs</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Pradhan, N. R. ; Rhodes, D. ; Zhang, Q. ; Talapatra, S. ; Terrones, M. ; Ajayan, P. M. ; Balicas, L.</creator><creatorcontrib>Pradhan, N. R. ; Rhodes, D. ; Zhang, Q. ; Talapatra, S. ; Terrones, M. ; Ajayan, P. M. ; Balicas, L.</creatorcontrib><description>By fabricating and characterizing multi-layered MoS2-based field-effect transistors in a four terminal configuration, we demonstrate that the two terminal-configurations tend to underestimate the carrier mobility μ due to the Schottky barriers at the contacts. For a back-gated two-terminal configuration, we observe mobilities as high as 91 cm2 V−1 s−1 which is considerably smaller than 306.5 cm2 V−1 s−1 as extracted from the same device when using a four-terminal configuration. This indicates that the intrinsic mobility of MoS2 on SiO2 is significantly larger than the values previously reported, and provides a quantitative method to evaluate the charge transport through the contacts.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4799172</identifier><language>eng</language><ispartof>Applied physics letters, 2013-03, Vol.102 (12)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c295t-64df72b7dad4eefbbf070991fa3b1586e642dc96186f89f6648ed3e043ff9dd43</citedby><cites>FETCH-LOGICAL-c295t-64df72b7dad4eefbbf070991fa3b1586e642dc96186f89f6648ed3e043ff9dd43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Pradhan, N. R.</creatorcontrib><creatorcontrib>Rhodes, D.</creatorcontrib><creatorcontrib>Zhang, Q.</creatorcontrib><creatorcontrib>Talapatra, S.</creatorcontrib><creatorcontrib>Terrones, M.</creatorcontrib><creatorcontrib>Ajayan, P. M.</creatorcontrib><creatorcontrib>Balicas, L.</creatorcontrib><title>Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2</title><title>Applied physics letters</title><description>By fabricating and characterizing multi-layered MoS2-based field-effect transistors in a four terminal configuration, we demonstrate that the two terminal-configurations tend to underestimate the carrier mobility μ due to the Schottky barriers at the contacts. For a back-gated two-terminal configuration, we observe mobilities as high as 91 cm2 V−1 s−1 which is considerably smaller than 306.5 cm2 V−1 s−1 as extracted from the same device when using a four-terminal configuration. This indicates that the intrinsic mobility of MoS2 on SiO2 is significantly larger than the values previously reported, and provides a quantitative method to evaluate the charge transport through the contacts.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNotkM1KAzEYRYMoOFYXvkG2LlLzN8lkKUVtoVKkuh4yk--DyPxIEhd9e0fs6nIX93A5hNwLvhbcqEex1tY5YeUFqQS3likhmktScc4VM64W1-Qm56-l1lKpirzvppLilGNPe59ShETHuYtDLCc6Ix1_hhLZ4E-QINC3-SgpRhgCA0ToCy3JL9tc5pTpPNFjPMhbcoV-yHB3zhX5fHn-2GzZ_vC62zztWS9dXZjRAa3sbPBBA2DXIbd8eY5edaJuDBgtQ--MaAw2Do3RDQQFXCtEF4JWK_Lwz-3TnHMCbL9THH06tYK3fy5a0Z5dqF9FXVGs</recordid><startdate>20130325</startdate><enddate>20130325</enddate><creator>Pradhan, N. R.</creator><creator>Rhodes, D.</creator><creator>Zhang, Q.</creator><creator>Talapatra, S.</creator><creator>Terrones, M.</creator><creator>Ajayan, P. M.</creator><creator>Balicas, L.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20130325</creationdate><title>Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2</title><author>Pradhan, N. R. ; Rhodes, D. ; Zhang, Q. ; Talapatra, S. ; Terrones, M. ; Ajayan, P. M. ; Balicas, L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c295t-64df72b7dad4eefbbf070991fa3b1586e642dc96186f89f6648ed3e043ff9dd43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pradhan, N. R.</creatorcontrib><creatorcontrib>Rhodes, D.</creatorcontrib><creatorcontrib>Zhang, Q.</creatorcontrib><creatorcontrib>Talapatra, S.</creatorcontrib><creatorcontrib>Terrones, M.</creatorcontrib><creatorcontrib>Ajayan, P. M.</creatorcontrib><creatorcontrib>Balicas, L.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Pradhan, N. R.</au><au>Rhodes, D.</au><au>Zhang, Q.</au><au>Talapatra, S.</au><au>Terrones, M.</au><au>Ajayan, P. M.</au><au>Balicas, L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2</atitle><jtitle>Applied physics letters</jtitle><date>2013-03-25</date><risdate>2013</risdate><volume>102</volume><issue>12</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>By fabricating and characterizing multi-layered MoS2-based field-effect transistors in a four terminal configuration, we demonstrate that the two terminal-configurations tend to underestimate the carrier mobility μ due to the Schottky barriers at the contacts. For a back-gated two-terminal configuration, we observe mobilities as high as 91 cm2 V−1 s−1 which is considerably smaller than 306.5 cm2 V−1 s−1 as extracted from the same device when using a four-terminal configuration. This indicates that the intrinsic mobility of MoS2 on SiO2 is significantly larger than the values previously reported, and provides a quantitative method to evaluate the charge transport through the contacts.</abstract><doi>10.1063/1.4799172</doi></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0003-6951 |
ispartof | Applied physics letters, 2013-03, Vol.102 (12) |
issn | 0003-6951 1077-3118 |
language | eng |
recordid | cdi_crossref_primary_10_1063_1_4799172 |
source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
title | Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2 |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T13%3A36%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Intrinsic%20carrier%20mobility%20of%20multi-layered%20MoS2%20field-effect%20transistors%20on%20SiO2&rft.jtitle=Applied%20physics%20letters&rft.au=Pradhan,%20N.%20R.&rft.date=2013-03-25&rft.volume=102&rft.issue=12&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4799172&rft_dat=%3Ccrossref%3E10_1063_1_4799172%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |