High optical gain of I–VII semiconductor quantum wells for efficient light-emitting devices
In this work, we propose I–VII semiconductor hetero-structure quantum wells as active layers, which have a large exciton binding energy suitable for strong optical transitions in light-emitting devices. They are also closely lattice-matched to Si substrates, therefore free from defects. A multiband...
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| Veröffentlicht in: | Applied physics letters 2013-03, Vol.102 (12) |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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