Investigation on origin of Z1/2 center in SiC by deep level transient spectroscopy and electron paramagnetic resonance

Investigation on origin of Z1/2 center in SiC by deep level transient spectroscopy and electron paramagnetic resonance

The Z1/2 center in n-type 4H-SiC epilayers—a dominant deep level limiting the carrier lifetime—has been investigated. Using capacitance versus voltage (C-V) measurements and deep level transient spectroscopy (DLTS), we show that the Z1/2 center is responsible for the carrier compensation in n-type 4...

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Veröffentlicht in:Applied physics letters 2013-03, Vol.102 (11)
Hauptverfasser: Kawahara, Koutarou, Thang Trinh, Xuan, Tien Son, Nguyen, Janzén, Erik, Suda, Jun, Kimoto, Tsunenobu
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container_issue 11
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container_title Applied physics letters
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creator Kawahara, Koutarou
Thang Trinh, Xuan
Tien Son, Nguyen
Janzén, Erik
Suda, Jun
Kimoto, Tsunenobu
description The Z1/2 center in n-type 4H-SiC epilayers—a dominant deep level limiting the carrier lifetime—has been investigated. Using capacitance versus voltage (C-V) measurements and deep level transient spectroscopy (DLTS), we show that the Z1/2 center is responsible for the carrier compensation in n-type 4H-SiC epilayers irradiated by low-energy (250 keV) electrons. The concentration of the Z1/2 defect obtained by C-V and DLTS correlates well with that of the carbon vacancy (VC) determined by electron paramagnetic resonance, suggesting that the Z1/2 deep level originates from VC.
doi_str_mv 10.1063/1.4796141
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title Investigation on origin of Z1/2 center in SiC by deep level transient spectroscopy and electron paramagnetic resonance
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