Conduction band offset at GeO2/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies

We report a consistent conduction band offset (CBO) at a GeO2/Ge interface determined by internal photoemission spectroscopy (IPE) and charge-corrected X-ray photoelectron spectroscopy (XPS). IPE results showed that the CBO value was larger than 1.5 eV irrespective of metal electrode and substrate t...

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Veröffentlicht in:	Applied physics letters 2013-03, Vol.102 (10)
Hauptverfasser:	Zhang, W. F., Nishimula, T., Nagashio, K., Kita, K., Toriumi, A.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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