Conduction band offset at GeO2/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies
We report a consistent conduction band offset (CBO) at a GeO2/Ge interface determined by internal photoemission spectroscopy (IPE) and charge-corrected X-ray photoelectron spectroscopy (XPS). IPE results showed that the CBO value was larger than 1.5 eV irrespective of metal electrode and substrate t...
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| Veröffentlicht in: | Applied physics letters 2013-03, Vol.102 (10) |
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| container_title | Applied physics letters |
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| creator | Zhang, W. F. Nishimula, T. Nagashio, K. Kita, K. Toriumi, A. |
| description | We report a consistent conduction band offset (CBO) at a GeO2/Ge interface determined by internal photoemission spectroscopy (IPE) and charge-corrected X-ray photoelectron spectroscopy (XPS). IPE results showed that the CBO value was larger than 1.5 eV irrespective of metal electrode and substrate type variance, while an accurate determination of valence band offset (VBO) by XPS requires a careful correction of differential charging phenomena. The VBO value was determined to be 3.60 ± 0.2 eV by XPS after charge correction, thus yielding a CBO (1.60 ± 0.2 eV) in excellent agreement with the IPE results. Such a large CBO (>1.5 eV) confirmed here is promising in terms of using GeO2 as a potential passivation layer for future Ge-based scaled CMOS devices. |
| doi_str_mv | 10.1063/1.4794417 |
| format | Article |
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F. ; Nishimula, T. ; Nagashio, K. ; Kita, K. ; Toriumi, A.</creator><creatorcontrib>Zhang, W. F. ; Nishimula, T. ; Nagashio, K. ; Kita, K. ; Toriumi, A.</creatorcontrib><description>We report a consistent conduction band offset (CBO) at a GeO2/Ge interface determined by internal photoemission spectroscopy (IPE) and charge-corrected X-ray photoelectron spectroscopy (XPS). IPE results showed that the CBO value was larger than 1.5 eV irrespective of metal electrode and substrate type variance, while an accurate determination of valence band offset (VBO) by XPS requires a careful correction of differential charging phenomena. The VBO value was determined to be 3.60 ± 0.2 eV by XPS after charge correction, thus yielding a CBO (1.60 ± 0.2 eV) in excellent agreement with the IPE results. Such a large CBO (>1.5 eV) confirmed here is promising in terms of using GeO2 as a potential passivation layer for future Ge-based scaled CMOS devices.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4794417</identifier><language>eng</language><ispartof>Applied physics letters, 2013-03, Vol.102 (10)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c295t-8c5e9e35f904adaeb050ba71e3ce45fa9942f8a7f05eb20d4409f83f40f55d2b3</citedby><cites>FETCH-LOGICAL-c295t-8c5e9e35f904adaeb050ba71e3ce45fa9942f8a7f05eb20d4409f83f40f55d2b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Zhang, W. 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The VBO value was determined to be 3.60 ± 0.2 eV by XPS after charge correction, thus yielding a CBO (1.60 ± 0.2 eV) in excellent agreement with the IPE results. Such a large CBO (>1.5 eV) confirmed here is promising in terms of using GeO2 as a potential passivation layer for future Ge-based scaled CMOS devices.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNotkMFOwzAQRC0EEqVw4A985eB2HdtNfEQVFKRKvcA5cuw1DUrjyDYS_QM-m7TNaWdHozfSEPLIYcFhJZZ8IUstJS-vyIxDWTLBeXVNZgAg2EorfkvuUvoeX1UIMSN_69C7H5vb0NPG9I4G7xNmajLd4K5YbpC2fcbojUXqcFSHtkdHm-PF701Hh33IAQ9tSifKCWL3Jn4hsyFGtHmM_7JojlOwG604BtNwFsmGocV0T2686RI-THdOPl9fPtZvbLvbvK-ft8wWWmVWWYUahfIapHEGG1DQmJKjsCiVN1rLwlem9KCwKcBJCdpXwkvwSrmiEXPydOHasTpF9PUQ24OJx5pDfZqw5vU0ofgHiO1nFw</recordid><startdate>20130311</startdate><enddate>20130311</enddate><creator>Zhang, W. 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F.</creatorcontrib><creatorcontrib>Nishimula, T.</creatorcontrib><creatorcontrib>Nagashio, K.</creatorcontrib><creatorcontrib>Kita, K.</creatorcontrib><creatorcontrib>Toriumi, A.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, W. 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The VBO value was determined to be 3.60 ± 0.2 eV by XPS after charge correction, thus yielding a CBO (1.60 ± 0.2 eV) in excellent agreement with the IPE results. Such a large CBO (>1.5 eV) confirmed here is promising in terms of using GeO2 as a potential passivation layer for future Ge-based scaled CMOS devices.</abstract><doi>10.1063/1.4794417</doi></addata></record> |
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| ispartof | Applied physics letters, 2013-03, Vol.102 (10) |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Conduction band offset at GeO2/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies |
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