Luminescence of free-standing versus matrix-embedded oxide-passivated silicon nanocrystals: The role of matrix-induced strain
We collect a large number of experimental data from various sources to demonstrate that free-standing (FS) oxide-passivated silicon nanocrystals (SiNCs) exhibit considerably blueshifted emission, by 200 meV on average, compared to those prepared as matrix-embedded (ME) ones of the same size. This is...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2012-10, Vol.101 (14) |
|---|---|
| Hauptverfasser: | , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 14 |
| container_start_page | |
| container_title | Applied physics letters |
| container_volume | 101 |
| creator | Kůsová, Kateřina Ondič, Lukáš Klimešová, Eva Herynková, Kateřina Pelant, Ivan Daniš, Stanislav Valenta, Jan Gallart, Mathieu Ziegler, Marc Hönerlage, Bernd Gilliot, Pierre |
| description | We collect a large number of experimental data from various sources to demonstrate that free-standing (FS) oxide-passivated silicon nanocrystals (SiNCs) exhibit considerably blueshifted emission, by 200 meV on average, compared to those prepared as matrix-embedded (ME) ones of the same size. This is suggested to arise from compressive strain, exerted on the nanocrystals by their matrix, which plays an important role in the light-emission process; this strain has been neglected up to now as opposed to the impact of quantum confinement or surface passivation. Our conclusion is also supported by the comparison of low-temperature behavior of photoluminescence of matrix-embedded and free-standing silicon nanocrystals. |
| doi_str_mv | 10.1063/1.4756696 |
| format | Article |
| fullrecord | <record><control><sourceid>hal_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_4756696</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_HAL_hal_04918853v1</sourcerecordid><originalsourceid>FETCH-LOGICAL-c364t-5e1e524bbd683bc18cb01eb0207d24476867caa0ec2dada07784bf836e0744e93</originalsourceid><addsrcrecordid>eNpFkDFPwzAUhC0EEqUw8A-8MrjYseM4bFUFLVIkljJbjv1CjRKnstOqHfjvpFDB9HSn-056h9A9ozNGJX9kM1HkUpbyAk0YLQrCGVOXaEIp5USWObtGNyl9jjLPOJ-gr2rX-QDJQrCA-wY3EYCkwQTnwwfeQ0y7hDszRH8g0NXgHDjcH7wDsjUp-b0ZRiP51ts-4GBCb-Nx5Nv0hNcbwLFvf3rPFT64nT0BQzQ-3KKrZkzC3flO0fvL83qxItXb8nUxr4jlUgwkBwZ5JuraScVry5StKYOaZrRwmRCFVLKwxlCwmTPOjG8rUTeKS6CFEFDyKXr47d2YVm-j70w86t54vZpX-uRRUTKlcr5n_1kb-5QiNH8Ao_q0sWb6vDH_BklpcHY</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Luminescence of free-standing versus matrix-embedded oxide-passivated silicon nanocrystals: The role of matrix-induced strain</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Kůsová, Kateřina ; Ondič, Lukáš ; Klimešová, Eva ; Herynková, Kateřina ; Pelant, Ivan ; Daniš, Stanislav ; Valenta, Jan ; Gallart, Mathieu ; Ziegler, Marc ; Hönerlage, Bernd ; Gilliot, Pierre</creator><creatorcontrib>Kůsová, Kateřina ; Ondič, Lukáš ; Klimešová, Eva ; Herynková, Kateřina ; Pelant, Ivan ; Daniš, Stanislav ; Valenta, Jan ; Gallart, Mathieu ; Ziegler, Marc ; Hönerlage, Bernd ; Gilliot, Pierre</creatorcontrib><description>We collect a large number of experimental data from various sources to demonstrate that free-standing (FS) oxide-passivated silicon nanocrystals (SiNCs) exhibit considerably blueshifted emission, by 200 meV on average, compared to those prepared as matrix-embedded (ME) ones of the same size. This is suggested to arise from compressive strain, exerted on the nanocrystals by their matrix, which plays an important role in the light-emission process; this strain has been neglected up to now as opposed to the impact of quantum confinement or surface passivation. Our conclusion is also supported by the comparison of low-temperature behavior of photoluminescence of matrix-embedded and free-standing silicon nanocrystals.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4756696</identifier><language>eng</language><publisher>American Institute of Physics</publisher><subject>Chemical Sciences</subject><ispartof>Applied physics letters, 2012-10, Vol.101 (14)</ispartof><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c364t-5e1e524bbd683bc18cb01eb0207d24476867caa0ec2dada07784bf836e0744e93</citedby><cites>FETCH-LOGICAL-c364t-5e1e524bbd683bc18cb01eb0207d24476867caa0ec2dada07784bf836e0744e93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://hal.science/hal-04918853$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Kůsová, Kateřina</creatorcontrib><creatorcontrib>Ondič, Lukáš</creatorcontrib><creatorcontrib>Klimešová, Eva</creatorcontrib><creatorcontrib>Herynková, Kateřina</creatorcontrib><creatorcontrib>Pelant, Ivan</creatorcontrib><creatorcontrib>Daniš, Stanislav</creatorcontrib><creatorcontrib>Valenta, Jan</creatorcontrib><creatorcontrib>Gallart, Mathieu</creatorcontrib><creatorcontrib>Ziegler, Marc</creatorcontrib><creatorcontrib>Hönerlage, Bernd</creatorcontrib><creatorcontrib>Gilliot, Pierre</creatorcontrib><title>Luminescence of free-standing versus matrix-embedded oxide-passivated silicon nanocrystals: The role of matrix-induced strain</title><title>Applied physics letters</title><description>We collect a large number of experimental data from various sources to demonstrate that free-standing (FS) oxide-passivated silicon nanocrystals (SiNCs) exhibit considerably blueshifted emission, by 200 meV on average, compared to those prepared as matrix-embedded (ME) ones of the same size. This is suggested to arise from compressive strain, exerted on the nanocrystals by their matrix, which plays an important role in the light-emission process; this strain has been neglected up to now as opposed to the impact of quantum confinement or surface passivation. Our conclusion is also supported by the comparison of low-temperature behavior of photoluminescence of matrix-embedded and free-standing silicon nanocrystals.</description><subject>Chemical Sciences</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNpFkDFPwzAUhC0EEqUw8A-8MrjYseM4bFUFLVIkljJbjv1CjRKnstOqHfjvpFDB9HSn-056h9A9ozNGJX9kM1HkUpbyAk0YLQrCGVOXaEIp5USWObtGNyl9jjLPOJ-gr2rX-QDJQrCA-wY3EYCkwQTnwwfeQ0y7hDszRH8g0NXgHDjcH7wDsjUp-b0ZRiP51ts-4GBCb-Nx5Nv0hNcbwLFvf3rPFT64nT0BQzQ-3KKrZkzC3flO0fvL83qxItXb8nUxr4jlUgwkBwZ5JuraScVry5StKYOaZrRwmRCFVLKwxlCwmTPOjG8rUTeKS6CFEFDyKXr47d2YVm-j70w86t54vZpX-uRRUTKlcr5n_1kb-5QiNH8Ao_q0sWb6vDH_BklpcHY</recordid><startdate>20121001</startdate><enddate>20121001</enddate><creator>Kůsová, Kateřina</creator><creator>Ondič, Lukáš</creator><creator>Klimešová, Eva</creator><creator>Herynková, Kateřina</creator><creator>Pelant, Ivan</creator><creator>Daniš, Stanislav</creator><creator>Valenta, Jan</creator><creator>Gallart, Mathieu</creator><creator>Ziegler, Marc</creator><creator>Hönerlage, Bernd</creator><creator>Gilliot, Pierre</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><scope>VOOES</scope></search><sort><creationdate>20121001</creationdate><title>Luminescence of free-standing versus matrix-embedded oxide-passivated silicon nanocrystals: The role of matrix-induced strain</title><author>Kůsová, Kateřina ; Ondič, Lukáš ; Klimešová, Eva ; Herynková, Kateřina ; Pelant, Ivan ; Daniš, Stanislav ; Valenta, Jan ; Gallart, Mathieu ; Ziegler, Marc ; Hönerlage, Bernd ; Gilliot, Pierre</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c364t-5e1e524bbd683bc18cb01eb0207d24476867caa0ec2dada07784bf836e0744e93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Chemical Sciences</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kůsová, Kateřina</creatorcontrib><creatorcontrib>Ondič, Lukáš</creatorcontrib><creatorcontrib>Klimešová, Eva</creatorcontrib><creatorcontrib>Herynková, Kateřina</creatorcontrib><creatorcontrib>Pelant, Ivan</creatorcontrib><creatorcontrib>Daniš, Stanislav</creatorcontrib><creatorcontrib>Valenta, Jan</creatorcontrib><creatorcontrib>Gallart, Mathieu</creatorcontrib><creatorcontrib>Ziegler, Marc</creatorcontrib><creatorcontrib>Hönerlage, Bernd</creatorcontrib><creatorcontrib>Gilliot, Pierre</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kůsová, Kateřina</au><au>Ondič, Lukáš</au><au>Klimešová, Eva</au><au>Herynková, Kateřina</au><au>Pelant, Ivan</au><au>Daniš, Stanislav</au><au>Valenta, Jan</au><au>Gallart, Mathieu</au><au>Ziegler, Marc</au><au>Hönerlage, Bernd</au><au>Gilliot, Pierre</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Luminescence of free-standing versus matrix-embedded oxide-passivated silicon nanocrystals: The role of matrix-induced strain</atitle><jtitle>Applied physics letters</jtitle><date>2012-10-01</date><risdate>2012</risdate><volume>101</volume><issue>14</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We collect a large number of experimental data from various sources to demonstrate that free-standing (FS) oxide-passivated silicon nanocrystals (SiNCs) exhibit considerably blueshifted emission, by 200 meV on average, compared to those prepared as matrix-embedded (ME) ones of the same size. This is suggested to arise from compressive strain, exerted on the nanocrystals by their matrix, which plays an important role in the light-emission process; this strain has been neglected up to now as opposed to the impact of quantum confinement or surface passivation. Our conclusion is also supported by the comparison of low-temperature behavior of photoluminescence of matrix-embedded and free-standing silicon nanocrystals.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.4756696</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2012-10, Vol.101 (14) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_4756696 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | Chemical Sciences |
| title | Luminescence of free-standing versus matrix-embedded oxide-passivated silicon nanocrystals: The role of matrix-induced strain |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T08%3A27%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-hal_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Luminescence%20of%20free-standing%20versus%20matrix-embedded%20oxide-passivated%20silicon%20nanocrystals:%20The%20role%20of%20matrix-induced%20strain&rft.jtitle=Applied%20physics%20letters&rft.au=K%C5%AFsov%C3%A1,%20Kate%C5%99ina&rft.date=2012-10-01&rft.volume=101&rft.issue=14&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4756696&rft_dat=%3Chal_cross%3Eoai_HAL_hal_04918853v1%3C/hal_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |