Disorder-free sputtering method on graphene
Deposition of various materials onto graphene without causing any disorder is highly desirable for graphene applications. Especially, sputtering is a versatile technique to deposit various metals and insulators for spintronics, and indium tin oxide to make transparent devices. However, the sputterin...
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| Veröffentlicht in: | AIP advances 2012-09, Vol.2 (3), p.032121-032121-6 |
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| container_end_page | 032121-6 |
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| container_issue | 3 |
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| container_title | AIP advances |
| container_volume | 2 |
| creator | Qiu, Xue Peng Shin, Young Jun Niu, Jing Kulothungasagaran, Narayanapillai Kalon, Gopinadhan Qiu, Caiyu Yu, Ting Yang, Hyunsoo |
| description | Deposition of various materials onto graphene without causing any disorder is highly desirable for graphene applications. Especially, sputtering is a versatile technique to deposit various metals and insulators for spintronics, and indium tin oxide to make transparent devices. However, the sputtering process causes damage to graphene because of high energy sputtered atoms. By flipping the substrate and using a high Ar pressure, we demonstrate that the level of damage to graphene can be reduced or eliminated in dc, rf, and reactive sputtering processes. |
| doi_str_mv | 10.1063/1.4739783 |
| format | Article |
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| source | DOAJ Directory of Open Access Journals; EZB-FREE-00999 freely available EZB journals; Alma/SFX Local Collection; Free Full-Text Journals in Chemistry |
| subjects | Damage DEPOSITION DEPOSITS Devices Disorders GRAPHENE INDIUM Indium tin oxide Insulators MATERIALS SCIENCE NANOSCIENCE AND NANOTECHNOLOGY SPUTTERING SUBSTRATES TIN OXIDES |
| title | Disorder-free sputtering method on graphene |
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