Exciton and carrier spin relaxations in InGaAs lattice-matched to off-cut Ge substrates

Exciton and carrier spin relaxations in InGaAs lattice-matched to off-cut Ge substrates

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Veröffentlicht in:Applied physics letters 2012-06, Vol.100 (25), p.252414
Hauptverfasser: Ushimi, Takenori, Nakata, Hiromi, Ishizuka, Toshihiro, Sasayama, Kazutoshi, Lu, Shulong, Dong, Jianrong, Tackeuchi, Atsushi
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container_end_page
container_issue 25
container_start_page 252414
container_title Applied physics letters
container_volume 100
creator Ushimi, Takenori
Nakata, Hiromi
Ishizuka, Toshihiro
Sasayama, Kazutoshi
Lu, Shulong
Dong, Jianrong
Tackeuchi, Atsushi
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doi_str_mv 10.1063/1.4730386
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_4730386</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_4730386</sourcerecordid><originalsourceid>FETCH-LOGICAL-c295t-63e4d4dcf499450295525754afdd1c00e0bd2cd19e8fa6efaa7d0a58701f23923</originalsourceid><addsrcrecordid>eNotkL1OwzAURi0EEqEw8AZeGVyuYzuOx6oqoVIlFhBjdOsfYZQmle1K5e0JotOn8w1nOIQ8clhyaMQzX0otQLTNFak4aM0E5-01qQBAsMYofkvucv6eUdVCVORzc7axTCPF0VGLKUWfaD7GkSY_4BlLnMZMZ9yOHa4yHbCUaD07YLFf3tEy0SkEZk-Fdp7m0z6XhMXne3ITcMj-4bIL8vGyeV-_st1bt12vdszWRhXWCC-ddDZIY6SC-VO10kpicI5bAA97V1vHjW8DNj4gageoWg081MLUYkGe_r02TTknH_pjigdMPz2H_q9Iz_tLEfELJlRTOw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Exciton and carrier spin relaxations in InGaAs lattice-matched to off-cut Ge substrates</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Ushimi, Takenori ; Nakata, Hiromi ; Ishizuka, Toshihiro ; Sasayama, Kazutoshi ; Lu, Shulong ; Dong, Jianrong ; Tackeuchi, Atsushi</creator><creatorcontrib>Ushimi, Takenori ; Nakata, Hiromi ; Ishizuka, Toshihiro ; Sasayama, Kazutoshi ; Lu, Shulong ; Dong, Jianrong ; Tackeuchi, Atsushi</creatorcontrib><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4730386</identifier><language>eng</language><ispartof>Applied physics letters, 2012-06, Vol.100 (25), p.252414</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c295t-63e4d4dcf499450295525754afdd1c00e0bd2cd19e8fa6efaa7d0a58701f23923</citedby><cites>FETCH-LOGICAL-c295t-63e4d4dcf499450295525754afdd1c00e0bd2cd19e8fa6efaa7d0a58701f23923</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Ushimi, Takenori</creatorcontrib><creatorcontrib>Nakata, Hiromi</creatorcontrib><creatorcontrib>Ishizuka, Toshihiro</creatorcontrib><creatorcontrib>Sasayama, Kazutoshi</creatorcontrib><creatorcontrib>Lu, Shulong</creatorcontrib><creatorcontrib>Dong, Jianrong</creatorcontrib><creatorcontrib>Tackeuchi, Atsushi</creatorcontrib><title>Exciton and carrier spin relaxations in InGaAs lattice-matched to off-cut Ge substrates</title><title>Applied physics letters</title><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNotkL1OwzAURi0EEqEw8AZeGVyuYzuOx6oqoVIlFhBjdOsfYZQmle1K5e0JotOn8w1nOIQ8clhyaMQzX0otQLTNFak4aM0E5-01qQBAsMYofkvucv6eUdVCVORzc7axTCPF0VGLKUWfaD7GkSY_4BlLnMZMZ9yOHa4yHbCUaD07YLFf3tEy0SkEZk-Fdp7m0z6XhMXne3ITcMj-4bIL8vGyeV-_st1bt12vdszWRhXWCC-ddDZIY6SC-VO10kpicI5bAA97V1vHjW8DNj4gageoWg081MLUYkGe_r02TTknH_pjigdMPz2H_q9Iz_tLEfELJlRTOw</recordid><startdate>20120618</startdate><enddate>20120618</enddate><creator>Ushimi, Takenori</creator><creator>Nakata, Hiromi</creator><creator>Ishizuka, Toshihiro</creator><creator>Sasayama, Kazutoshi</creator><creator>Lu, Shulong</creator><creator>Dong, Jianrong</creator><creator>Tackeuchi, Atsushi</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20120618</creationdate><title>Exciton and carrier spin relaxations in InGaAs lattice-matched to off-cut Ge substrates</title><author>Ushimi, Takenori ; Nakata, Hiromi ; Ishizuka, Toshihiro ; Sasayama, Kazutoshi ; Lu, Shulong ; Dong, Jianrong ; Tackeuchi, Atsushi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c295t-63e4d4dcf499450295525754afdd1c00e0bd2cd19e8fa6efaa7d0a58701f23923</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ushimi, Takenori</creatorcontrib><creatorcontrib>Nakata, Hiromi</creatorcontrib><creatorcontrib>Ishizuka, Toshihiro</creatorcontrib><creatorcontrib>Sasayama, Kazutoshi</creatorcontrib><creatorcontrib>Lu, Shulong</creatorcontrib><creatorcontrib>Dong, Jianrong</creatorcontrib><creatorcontrib>Tackeuchi, Atsushi</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ushimi, Takenori</au><au>Nakata, Hiromi</au><au>Ishizuka, Toshihiro</au><au>Sasayama, Kazutoshi</au><au>Lu, Shulong</au><au>Dong, Jianrong</au><au>Tackeuchi, Atsushi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Exciton and carrier spin relaxations in InGaAs lattice-matched to off-cut Ge substrates</atitle><jtitle>Applied physics letters</jtitle><date>2012-06-18</date><risdate>2012</risdate><volume>100</volume><issue>25</issue><spage>252414</spage><pages>252414-</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><doi>10.1063/1.4730386</doi></addata></record>
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1077-3118
language eng
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title Exciton and carrier spin relaxations in InGaAs lattice-matched to off-cut Ge substrates
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T17%3A34%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Exciton%20and%20carrier%20spin%20relaxations%20in%20InGaAs%20lattice-matched%20to%20off-cut%20Ge%20substrates&rft.jtitle=Applied%20physics%20letters&rft.au=Ushimi,%20Takenori&rft.date=2012-06-18&rft.volume=100&rft.issue=25&rft.spage=252414&rft.pages=252414-&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4730386&rft_dat=%3Ccrossref%3E10_1063_1_4730386%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true