Investigation of green InGaN light-emitting diodes with asymmetric AlGaN composition-graded barriers and without an electron blocking layer

Investigation of green InGaN light-emitting diodes with asymmetric AlGaN composition-graded barriers and without an electron blocking layer

In this study, a green InGaN light-emitting diode with asymmetric AlGaN composition-graded barriers and without the use of an AlGaN electron blocking layer is presented to possess markedly enhanced optical and electrical performance. The simulation results show that the output power is increased by...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2012-06, Vol.100 (25)
Hauptverfasser: Chang, Yi-An, Chang, Jih-Yuan, Kuo, Yih-Ting, Kuo, Yen-Kuang
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 25
container_start_page
container_title Applied physics letters
container_volume 100
creator Chang, Yi-An
Chang, Jih-Yuan
Kuo, Yih-Ting
Kuo, Yen-Kuang
description In this study, a green InGaN light-emitting diode with asymmetric AlGaN composition-graded barriers and without the use of an AlGaN electron blocking layer is presented to possess markedly enhanced optical and electrical performance. The simulation results show that the output power is increased by 10.0% and 33.2%, which corresponds to an increment of 7% and 29.4% in internal quantum efficiency, at 100 mA when the conventional GaN barriers are replaced by the asymmetric AlGaN composition-graded barriers and the commonly used AlGaN electron blocking layer is removed. The simulation results suggest that the improved device performance is due mainly to the markedly enhanced injection of holes into the active region.
doi_str_mv 10.1063/1.4729880
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_4729880</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_4729880</sourcerecordid><originalsourceid>FETCH-LOGICAL-c229t-ddb386a700ab71a0a2a5702be7262eef7c14c6542e27c052e4d8fe32356b50e53</originalsourceid><addsrcrecordid>eNotkM1OwzAQhC0EEqVw4A185eDinyROj1UFpVIFFzhHG3uTGpK4sg2oz8BLk0BPsyPNfqsdQm4FXwheqHuxyLRcliU_IzPBtWZKiPKczDjnihXLXFySqxjfR5tLpWbkZzt8YUyuheT8QH1D24A40O2wgWfauXafGPYuJTe01DpvMdJvl_YU4rHvMQVn6Kqbssb3Bx_dhGFtAIuW1hCCwxApDPZvy3-mcabYoUlhPFd33nxM5A6OGK7JRQNdxJuTzsnb48Pr-ontXjbb9WrHjJTLxKytVVmA5hxqLYCDhFxzWaOWhURstBGZKfJMotRmfBMzWzaopMqLOueYqzm5--ea4GMM2FSH4HoIx0rwamqxEtWpRfULuP9nPg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Investigation of green InGaN light-emitting diodes with asymmetric AlGaN composition-graded barriers and without an electron blocking layer</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Chang, Yi-An ; Chang, Jih-Yuan ; Kuo, Yih-Ting ; Kuo, Yen-Kuang</creator><creatorcontrib>Chang, Yi-An ; Chang, Jih-Yuan ; Kuo, Yih-Ting ; Kuo, Yen-Kuang</creatorcontrib><description>In this study, a green InGaN light-emitting diode with asymmetric AlGaN composition-graded barriers and without the use of an AlGaN electron blocking layer is presented to possess markedly enhanced optical and electrical performance. The simulation results show that the output power is increased by 10.0% and 33.2%, which corresponds to an increment of 7% and 29.4% in internal quantum efficiency, at 100 mA when the conventional GaN barriers are replaced by the asymmetric AlGaN composition-graded barriers and the commonly used AlGaN electron blocking layer is removed. The simulation results suggest that the improved device performance is due mainly to the markedly enhanced injection of holes into the active region.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4729880</identifier><language>eng</language><ispartof>Applied physics letters, 2012-06, Vol.100 (25)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c229t-ddb386a700ab71a0a2a5702be7262eef7c14c6542e27c052e4d8fe32356b50e53</citedby><cites>FETCH-LOGICAL-c229t-ddb386a700ab71a0a2a5702be7262eef7c14c6542e27c052e4d8fe32356b50e53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Chang, Yi-An</creatorcontrib><creatorcontrib>Chang, Jih-Yuan</creatorcontrib><creatorcontrib>Kuo, Yih-Ting</creatorcontrib><creatorcontrib>Kuo, Yen-Kuang</creatorcontrib><title>Investigation of green InGaN light-emitting diodes with asymmetric AlGaN composition-graded barriers and without an electron blocking layer</title><title>Applied physics letters</title><description>In this study, a green InGaN light-emitting diode with asymmetric AlGaN composition-graded barriers and without the use of an AlGaN electron blocking layer is presented to possess markedly enhanced optical and electrical performance. The simulation results show that the output power is increased by 10.0% and 33.2%, which corresponds to an increment of 7% and 29.4% in internal quantum efficiency, at 100 mA when the conventional GaN barriers are replaced by the asymmetric AlGaN composition-graded barriers and the commonly used AlGaN electron blocking layer is removed. The simulation results suggest that the improved device performance is due mainly to the markedly enhanced injection of holes into the active region.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNotkM1OwzAQhC0EEqVw4A185eDinyROj1UFpVIFFzhHG3uTGpK4sg2oz8BLk0BPsyPNfqsdQm4FXwheqHuxyLRcliU_IzPBtWZKiPKczDjnihXLXFySqxjfR5tLpWbkZzt8YUyuheT8QH1D24A40O2wgWfauXafGPYuJTe01DpvMdJvl_YU4rHvMQVn6Kqbssb3Bx_dhGFtAIuW1hCCwxApDPZvy3-mcabYoUlhPFd33nxM5A6OGK7JRQNdxJuTzsnb48Pr-ontXjbb9WrHjJTLxKytVVmA5hxqLYCDhFxzWaOWhURstBGZKfJMotRmfBMzWzaopMqLOueYqzm5--ea4GMM2FSH4HoIx0rwamqxEtWpRfULuP9nPg</recordid><startdate>20120618</startdate><enddate>20120618</enddate><creator>Chang, Yi-An</creator><creator>Chang, Jih-Yuan</creator><creator>Kuo, Yih-Ting</creator><creator>Kuo, Yen-Kuang</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20120618</creationdate><title>Investigation of green InGaN light-emitting diodes with asymmetric AlGaN composition-graded barriers and without an electron blocking layer</title><author>Chang, Yi-An ; Chang, Jih-Yuan ; Kuo, Yih-Ting ; Kuo, Yen-Kuang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c229t-ddb386a700ab71a0a2a5702be7262eef7c14c6542e27c052e4d8fe32356b50e53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chang, Yi-An</creatorcontrib><creatorcontrib>Chang, Jih-Yuan</creatorcontrib><creatorcontrib>Kuo, Yih-Ting</creatorcontrib><creatorcontrib>Kuo, Yen-Kuang</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chang, Yi-An</au><au>Chang, Jih-Yuan</au><au>Kuo, Yih-Ting</au><au>Kuo, Yen-Kuang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of green InGaN light-emitting diodes with asymmetric AlGaN composition-graded barriers and without an electron blocking layer</atitle><jtitle>Applied physics letters</jtitle><date>2012-06-18</date><risdate>2012</risdate><volume>100</volume><issue>25</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>In this study, a green InGaN light-emitting diode with asymmetric AlGaN composition-graded barriers and without the use of an AlGaN electron blocking layer is presented to possess markedly enhanced optical and electrical performance. The simulation results show that the output power is increased by 10.0% and 33.2%, which corresponds to an increment of 7% and 29.4% in internal quantum efficiency, at 100 mA when the conventional GaN barriers are replaced by the asymmetric AlGaN composition-graded barriers and the commonly used AlGaN electron blocking layer is removed. The simulation results suggest that the improved device performance is due mainly to the markedly enhanced injection of holes into the active region.</abstract><doi>10.1063/1.4729880</doi></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2012-06, Vol.100 (25)
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_4729880
source AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection
title Investigation of green InGaN light-emitting diodes with asymmetric AlGaN composition-graded barriers and without an electron blocking layer
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T11%3A45%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Investigation%20of%20green%20InGaN%20light-emitting%20diodes%20with%20asymmetric%20AlGaN%20composition-graded%20barriers%20and%20without%20an%20electron%20blocking%20layer&rft.jtitle=Applied%20physics%20letters&rft.au=Chang,%20Yi-An&rft.date=2012-06-18&rft.volume=100&rft.issue=25&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4729880&rft_dat=%3Ccrossref%3E10_1063_1_4729880%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true