An enhancement of a thermoelectric power factor in a Ga-doped ZnO system: A chemical compression by enlarged Ga solubility
Herein, we report a significant enhancement of the thermoelectric power factor in polycrystalline Ga-doped ZnO. Despite its higher carrier concentration, the Seebeck coefficient of Zn0.985Ga0.015O was larger than that of Zn0.990Ga0.010O benefiting from an enhancement of the density of states (DOS) e...
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Veröffentlicht in: | Applied physics letters 2012-06, Vol.100 (25) |
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creator | Jung, Kwang-Hee Hyoung Lee, Kyu Seo, Won-Seon Choi, Soon-Mok |
description | Herein, we report a significant enhancement of the thermoelectric power factor in polycrystalline Ga-doped ZnO. Despite its higher carrier concentration, the Seebeck coefficient of Zn0.985Ga0.015O was larger than that of Zn0.990Ga0.010O benefiting from an enhancement of the density of states (DOS) effective mass. A gradual increase in the compressive stress with Ga substitution gave rise to a higher DOS at the bottom of the conduction band. An enlarged solution limit of Ga in the ZnO matrix due to a lower firing temperature accelerated the chemical compression. A single phase n-type Zn0.985Ga0.015O bulk exhibited a power factor of 12.5 μWcm−1 K−2. |
doi_str_mv | 10.1063/1.4729560 |
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title | An enhancement of a thermoelectric power factor in a Ga-doped ZnO system: A chemical compression by enlarged Ga solubility |
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