An enhancement of a thermoelectric power factor in a Ga-doped ZnO system: A chemical compression by enlarged Ga solubility

Herein, we report a significant enhancement of the thermoelectric power factor in polycrystalline Ga-doped ZnO. Despite its higher carrier concentration, the Seebeck coefficient of Zn0.985Ga0.015O was larger than that of Zn0.990Ga0.010O benefiting from an enhancement of the density of states (DOS) e...

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Veröffentlicht in:Applied physics letters 2012-06, Vol.100 (25)
Hauptverfasser: Jung, Kwang-Hee, Hyoung Lee, Kyu, Seo, Won-Seon, Choi, Soon-Mok
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Seo, Won-Seon
Choi, Soon-Mok
description Herein, we report a significant enhancement of the thermoelectric power factor in polycrystalline Ga-doped ZnO. Despite its higher carrier concentration, the Seebeck coefficient of Zn0.985Ga0.015O was larger than that of Zn0.990Ga0.010O benefiting from an enhancement of the density of states (DOS) effective mass. A gradual increase in the compressive stress with Ga substitution gave rise to a higher DOS at the bottom of the conduction band. An enlarged solution limit of Ga in the ZnO matrix due to a lower firing temperature accelerated the chemical compression. A single phase n-type Zn0.985Ga0.015O bulk exhibited a power factor of 12.5 μWcm−1 K−2.
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title An enhancement of a thermoelectric power factor in a Ga-doped ZnO system: A chemical compression by enlarged Ga solubility
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