Surface passivation of c-Si by atmospheric pressure chemical vapor deposition of Al2O3

Surface passivation of c-Si by atmospheric pressure chemical vapor deposition of Al2O3

Atmospheric pressure chemical vapor deposition of Al2O3 is shown to provide excellent passivation of crystalline silicon surfaces. Surface passivation, permittivity, and refractive index are investigated before and after annealing for deposition temperatures between 330 and 520 °C. Deposition temper...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2012-05, Vol.100 (20)
Hauptverfasser: Black, Lachlan E., McIntosh, Keith R.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 20
container_start_page
container_title Applied physics letters
container_volume 100
creator Black, Lachlan E.
McIntosh, Keith R.
description Atmospheric pressure chemical vapor deposition of Al2O3 is shown to provide excellent passivation of crystalline silicon surfaces. Surface passivation, permittivity, and refractive index are investigated before and after annealing for deposition temperatures between 330 and 520 °C. Deposition temperatures >440 °C result in the best passivation, due to both a large negative fixed charge density (∼2 × 1012 cm−2) and a relatively low interface defect density (∼1 × 1011 eV−1 cm−2), with or without an anneal. The influence of deposition temperature on film properties is found to persist after subsequent heat treatment. Correlations between surface passivation properties and the permittivity are discussed.
doi_str_mv 10.1063/1.4718596
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_4718596</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_4718596</sourcerecordid><originalsourceid>FETCH-LOGICAL-c260t-addd5c14aacd2914dcbc3566990f6528e00a31ab2e1694a305f08655a1fe9e363</originalsourceid><addsrcrecordid>eNo1kLFOwzAURS0EEqUw8AdeGVzei2MnHqsKKFKlDgXW6MWxVaMER3ZaqX8PiDId3eHc4TB2j7BA0PIRF2WFtTL6gs0QqkpIxPqSzQBACm0UXrObnD9_piqknLGP3SF5so6PlHM40hTiF4-eW7ELvD1xmoaYx71LwfIxuZwPyXG7d0Ow1PMjjTHxzo0xh39z2RdbecuuPPXZ3Z05Z-_PT2-rtdhsX15Xy42whYZJUNd1ymJJZLvCYNnZ1kqltTHgtSpqB0ASqS0calOSBOWh1koRemec1HLOHv5-bYo5J-ebMYWB0qlBaH6DNNicg8hv9bxS1w</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Surface passivation of c-Si by atmospheric pressure chemical vapor deposition of Al2O3</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Black, Lachlan E. ; McIntosh, Keith R.</creator><creatorcontrib>Black, Lachlan E. ; McIntosh, Keith R.</creatorcontrib><description>Atmospheric pressure chemical vapor deposition of Al2O3 is shown to provide excellent passivation of crystalline silicon surfaces. Surface passivation, permittivity, and refractive index are investigated before and after annealing for deposition temperatures between 330 and 520 °C. Deposition temperatures &gt;440 °C result in the best passivation, due to both a large negative fixed charge density (∼2 × 1012 cm−2) and a relatively low interface defect density (∼1 × 1011 eV−1 cm−2), with or without an anneal. The influence of deposition temperature on film properties is found to persist after subsequent heat treatment. Correlations between surface passivation properties and the permittivity are discussed.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4718596</identifier><language>eng</language><ispartof>Applied physics letters, 2012-05, Vol.100 (20)</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c260t-addd5c14aacd2914dcbc3566990f6528e00a31ab2e1694a305f08655a1fe9e363</citedby><cites>FETCH-LOGICAL-c260t-addd5c14aacd2914dcbc3566990f6528e00a31ab2e1694a305f08655a1fe9e363</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Black, Lachlan E.</creatorcontrib><creatorcontrib>McIntosh, Keith R.</creatorcontrib><title>Surface passivation of c-Si by atmospheric pressure chemical vapor deposition of Al2O3</title><title>Applied physics letters</title><description>Atmospheric pressure chemical vapor deposition of Al2O3 is shown to provide excellent passivation of crystalline silicon surfaces. Surface passivation, permittivity, and refractive index are investigated before and after annealing for deposition temperatures between 330 and 520 °C. Deposition temperatures &gt;440 °C result in the best passivation, due to both a large negative fixed charge density (∼2 × 1012 cm−2) and a relatively low interface defect density (∼1 × 1011 eV−1 cm−2), with or without an anneal. The influence of deposition temperature on film properties is found to persist after subsequent heat treatment. Correlations between surface passivation properties and the permittivity are discussed.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNo1kLFOwzAURS0EEqUw8AdeGVzei2MnHqsKKFKlDgXW6MWxVaMER3ZaqX8PiDId3eHc4TB2j7BA0PIRF2WFtTL6gs0QqkpIxPqSzQBACm0UXrObnD9_piqknLGP3SF5so6PlHM40hTiF4-eW7ELvD1xmoaYx71LwfIxuZwPyXG7d0Ow1PMjjTHxzo0xh39z2RdbecuuPPXZ3Z05Z-_PT2-rtdhsX15Xy42whYZJUNd1ymJJZLvCYNnZ1kqltTHgtSpqB0ASqS0calOSBOWh1koRemec1HLOHv5-bYo5J-ebMYWB0qlBaH6DNNicg8hv9bxS1w</recordid><startdate>20120514</startdate><enddate>20120514</enddate><creator>Black, Lachlan E.</creator><creator>McIntosh, Keith R.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20120514</creationdate><title>Surface passivation of c-Si by atmospheric pressure chemical vapor deposition of Al2O3</title><author>Black, Lachlan E. ; McIntosh, Keith R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c260t-addd5c14aacd2914dcbc3566990f6528e00a31ab2e1694a305f08655a1fe9e363</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Black, Lachlan E.</creatorcontrib><creatorcontrib>McIntosh, Keith R.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Black, Lachlan E.</au><au>McIntosh, Keith R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Surface passivation of c-Si by atmospheric pressure chemical vapor deposition of Al2O3</atitle><jtitle>Applied physics letters</jtitle><date>2012-05-14</date><risdate>2012</risdate><volume>100</volume><issue>20</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Atmospheric pressure chemical vapor deposition of Al2O3 is shown to provide excellent passivation of crystalline silicon surfaces. Surface passivation, permittivity, and refractive index are investigated before and after annealing for deposition temperatures between 330 and 520 °C. Deposition temperatures &gt;440 °C result in the best passivation, due to both a large negative fixed charge density (∼2 × 1012 cm−2) and a relatively low interface defect density (∼1 × 1011 eV−1 cm−2), with or without an anneal. The influence of deposition temperature on film properties is found to persist after subsequent heat treatment. Correlations between surface passivation properties and the permittivity are discussed.</abstract><doi>10.1063/1.4718596</doi><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2012-05, Vol.100 (20)
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_4718596
source AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection
title Surface passivation of c-Si by atmospheric pressure chemical vapor deposition of Al2O3
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T20%3A58%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Surface%20passivation%20of%20c-Si%20by%20atmospheric%20pressure%20chemical%20vapor%20deposition%20of%20Al2O3&rft.jtitle=Applied%20physics%20letters&rft.au=Black,%20Lachlan%20E.&rft.date=2012-05-14&rft.volume=100&rft.issue=20&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4718596&rft_dat=%3Ccrossref%3E10_1063_1_4718596%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true