Perpendicular-magnetic-anisotropy CoFeB racetrack memory
Current-induced domain wall motion in magnetic nanowires drives the invention of a novel ultra-dense non-volatile storage device, called "racetrack memory." Combining with magnetic tunnel junctions write and read heads, CMOS integrability and fast data access speed can also be achieved. Re...
Gespeichert in:
| Veröffentlicht in: | Journal of applied physics 2012-05, Vol.111 (9), p.093925-093925-5 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 093925-5 |
|---|---|
| container_issue | 9 |
| container_start_page | 093925 |
| container_title | Journal of applied physics |
| container_volume | 111 |
| creator | Zhang, Y. Zhao, W. S. Ravelosona, D. Klein, J.-O. Kim, J. V. Chappert, C. |
| description | Current-induced domain wall motion in magnetic nanowires drives the invention of a novel ultra-dense non-volatile storage device, called "racetrack memory." Combining with magnetic tunnel junctions write and read heads, CMOS integrability and fast data access speed can also be achieved. Recent experimental progress showed that perpendicular-magnetic anisotropy (PMA) CoFeB could be a good candidate to build up racetrack memory and promise high performance like high-density (e.g., ∼1 F
2
/bit), fast-speed, and low-power beyond classical spin transfer torque memories. In this paper, we first present the design of PMA CoFeB racetrack memory and a spice-compatible model to perform mixed simulation with CMOS circuits. Its area, speed, and power dissipation performance has been simulated and evaluated based on different technology nodes. |
| doi_str_mv | 10.1063/1.4716460 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_4716460</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>jap</sourcerecordid><originalsourceid>FETCH-LOGICAL-c350t-7d21d530360d6b80699fe56b39313e34ed060adddc67af421582ba51ec8ffcc93</originalsourceid><addsrcrecordid>eNp1zztPwzAUhmELgUQoDPyDrAwu58SxYy9IEFFAqgQDzJHjCzI0F9lhyL-nVbowsJyzvPqkh5BrhDWCYLe4LisUpYATkiFIRSvO4ZRkAAVSqSp1Ti5S-gJAlExlRL65OLreBvOz05F2-rN3UzBU9yENUxzGOa-HjXvIozZu2p_vvHPdEOdLcub1Lrmr41-Rj83je_1Mt69PL_X9lhrGYaKVLdByBkyAFa0EoZR3XLRMMWSOlc6CAG2tNaLSviyQy6LVHJ2R3huj2IrcLLsmDilF55sxhk7HuUFoDuQGmyN5394tbTJh0lMY-v_jP-5mcbNfs_JeTg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Perpendicular-magnetic-anisotropy CoFeB racetrack memory</title><source>American Institute of Physics</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Zhang, Y. ; Zhao, W. S. ; Ravelosona, D. ; Klein, J.-O. ; Kim, J. V. ; Chappert, C.</creator><creatorcontrib>Zhang, Y. ; Zhao, W. S. ; Ravelosona, D. ; Klein, J.-O. ; Kim, J. V. ; Chappert, C.</creatorcontrib><description>Current-induced domain wall motion in magnetic nanowires drives the invention of a novel ultra-dense non-volatile storage device, called "racetrack memory." Combining with magnetic tunnel junctions write and read heads, CMOS integrability and fast data access speed can also be achieved. Recent experimental progress showed that perpendicular-magnetic anisotropy (PMA) CoFeB could be a good candidate to build up racetrack memory and promise high performance like high-density (e.g., ∼1 F
2
/bit), fast-speed, and low-power beyond classical spin transfer torque memories. In this paper, we first present the design of PMA CoFeB racetrack memory and a spice-compatible model to perform mixed simulation with CMOS circuits. Its area, speed, and power dissipation performance has been simulated and evaluated based on different technology nodes.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4716460</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Journal of applied physics, 2012-05, Vol.111 (9), p.093925-093925-5</ispartof><rights>2012 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-7d21d530360d6b80699fe56b39313e34ed060adddc67af421582ba51ec8ffcc93</citedby><cites>FETCH-LOGICAL-c350t-7d21d530360d6b80699fe56b39313e34ed060adddc67af421582ba51ec8ffcc93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.4716460$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,1559,4512,27924,27925,76384,76390</link.rule.ids></links><search><creatorcontrib>Zhang, Y.</creatorcontrib><creatorcontrib>Zhao, W. S.</creatorcontrib><creatorcontrib>Ravelosona, D.</creatorcontrib><creatorcontrib>Klein, J.-O.</creatorcontrib><creatorcontrib>Kim, J. V.</creatorcontrib><creatorcontrib>Chappert, C.</creatorcontrib><title>Perpendicular-magnetic-anisotropy CoFeB racetrack memory</title><title>Journal of applied physics</title><description>Current-induced domain wall motion in magnetic nanowires drives the invention of a novel ultra-dense non-volatile storage device, called "racetrack memory." Combining with magnetic tunnel junctions write and read heads, CMOS integrability and fast data access speed can also be achieved. Recent experimental progress showed that perpendicular-magnetic anisotropy (PMA) CoFeB could be a good candidate to build up racetrack memory and promise high performance like high-density (e.g., ∼1 F
2
/bit), fast-speed, and low-power beyond classical spin transfer torque memories. In this paper, we first present the design of PMA CoFeB racetrack memory and a spice-compatible model to perform mixed simulation with CMOS circuits. Its area, speed, and power dissipation performance has been simulated and evaluated based on different technology nodes.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNp1zztPwzAUhmELgUQoDPyDrAwu58SxYy9IEFFAqgQDzJHjCzI0F9lhyL-nVbowsJyzvPqkh5BrhDWCYLe4LisUpYATkiFIRSvO4ZRkAAVSqSp1Ti5S-gJAlExlRL65OLreBvOz05F2-rN3UzBU9yENUxzGOa-HjXvIozZu2p_vvHPdEOdLcub1Lrmr41-Rj83je_1Mt69PL_X9lhrGYaKVLdByBkyAFa0EoZR3XLRMMWSOlc6CAG2tNaLSviyQy6LVHJ2R3huj2IrcLLsmDilF55sxhk7HuUFoDuQGmyN5394tbTJh0lMY-v_jP-5mcbNfs_JeTg</recordid><startdate>20120501</startdate><enddate>20120501</enddate><creator>Zhang, Y.</creator><creator>Zhao, W. S.</creator><creator>Ravelosona, D.</creator><creator>Klein, J.-O.</creator><creator>Kim, J. V.</creator><creator>Chappert, C.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20120501</creationdate><title>Perpendicular-magnetic-anisotropy CoFeB racetrack memory</title><author>Zhang, Y. ; Zhao, W. S. ; Ravelosona, D. ; Klein, J.-O. ; Kim, J. V. ; Chappert, C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-7d21d530360d6b80699fe56b39313e34ed060adddc67af421582ba51ec8ffcc93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Y.</creatorcontrib><creatorcontrib>Zhao, W. S.</creatorcontrib><creatorcontrib>Ravelosona, D.</creatorcontrib><creatorcontrib>Klein, J.-O.</creatorcontrib><creatorcontrib>Kim, J. V.</creatorcontrib><creatorcontrib>Chappert, C.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Y.</au><au>Zhao, W. S.</au><au>Ravelosona, D.</au><au>Klein, J.-O.</au><au>Kim, J. V.</au><au>Chappert, C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Perpendicular-magnetic-anisotropy CoFeB racetrack memory</atitle><jtitle>Journal of applied physics</jtitle><date>2012-05-01</date><risdate>2012</risdate><volume>111</volume><issue>9</issue><spage>093925</spage><epage>093925-5</epage><pages>093925-093925-5</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Current-induced domain wall motion in magnetic nanowires drives the invention of a novel ultra-dense non-volatile storage device, called "racetrack memory." Combining with magnetic tunnel junctions write and read heads, CMOS integrability and fast data access speed can also be achieved. Recent experimental progress showed that perpendicular-magnetic anisotropy (PMA) CoFeB could be a good candidate to build up racetrack memory and promise high performance like high-density (e.g., ∼1 F
2
/bit), fast-speed, and low-power beyond classical spin transfer torque memories. In this paper, we first present the design of PMA CoFeB racetrack memory and a spice-compatible model to perform mixed simulation with CMOS circuits. Its area, speed, and power dissipation performance has been simulated and evaluated based on different technology nodes.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.4716460</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2012-05, Vol.111 (9), p.093925-093925-5 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_4716460 |
| source | American Institute of Physics; AIP Digital Archive; Alma/SFX Local Collection |
| title | Perpendicular-magnetic-anisotropy CoFeB racetrack memory |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T09%3A41%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Perpendicular-magnetic-anisotropy%20CoFeB%20racetrack%20memory&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Zhang,%20Y.&rft.date=2012-05-01&rft.volume=111&rft.issue=9&rft.spage=093925&rft.epage=093925-5&rft.pages=093925-093925-5&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.4716460&rft_dat=%3Cscitation_cross%3Ejap%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |