High-power 2.0 µ m semiconductor disk laser-Influence of lateral lasing

The influence of lateral lasing on the high-power performance of 2 µ m GaSb-based optically pumped semiconductor disk laser (SDL) has been investigated. The maximum cw output power of the SDL exceeded 4.1W at 20°C heat sink temperature. The occurrence of lateral lasing was observed by recording the...

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Veröffentlicht in:	Applied physics letters 2012-05, Vol.100 (19), p.192107-192107-3
Hauptverfasser:	Töpper, Tino, Rattunde, Marcel, Kaspar, Sebastian, Moser, Rüdiger, Manz, Christian, Köhler, Klaus, Wagner, Joachim
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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