Vertical conduction mechanism of the epitaxial graphene/n-type 4H-SiC heterojunction at cryogenic temperatures
Vertical diodes of epitaxial graphene on n − 4H-SiC were investigated. The graphene Raman spectra exhibited a higher intensity in the G-line than the 2D-line, indicative of a few-layer graphene film. Rectifying properties improved at low temperatures as the reverse leakage decreased over six orders...
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| Veröffentlicht in: | Applied physics letters 2012-05, Vol.100 (19), p.193506-193506-4 |
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| container_end_page | 193506-4 |
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| container_title | Applied physics letters |
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| creator | Tadjer, M. J. Anderson, T. J. Hobart, K. D. Nyakiti, L. O. Wheeler, V. D. Myers-Ward, R. L. Gaskill, D. K. Eddy, C. R. Kub, F. J. Calle, F. |
| description | Vertical diodes of epitaxial graphene on n
−
4H-SiC were investigated. The graphene Raman spectra exhibited a higher intensity in the G-line than the 2D-line, indicative of a few-layer graphene film. Rectifying properties improved at low temperatures as the reverse leakage decreased over six orders of magnitude without freeze-out in either material. Carrier concentration of ∼10
16
cm
−3
in the SiC remained stable down to 15 K, while accumulation charge decreased and depletion width increased in forward bias. The low barrier height of 0.08eV and absence of recombination-induced emission indicated majority carrier field emission as the dominant conduction mechanism. |
| doi_str_mv | 10.1063/1.4712621 |
| format | Article |
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−
4H-SiC were investigated. The graphene Raman spectra exhibited a higher intensity in the G-line than the 2D-line, indicative of a few-layer graphene film. Rectifying properties improved at low temperatures as the reverse leakage decreased over six orders of magnitude without freeze-out in either material. Carrier concentration of ∼10
16
cm
−3
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−
4H-SiC were investigated. The graphene Raman spectra exhibited a higher intensity in the G-line than the 2D-line, indicative of a few-layer graphene film. Rectifying properties improved at low temperatures as the reverse leakage decreased over six orders of magnitude without freeze-out in either material. Carrier concentration of ∼10
16
cm
−3
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−
4H-SiC were investigated. The graphene Raman spectra exhibited a higher intensity in the G-line than the 2D-line, indicative of a few-layer graphene film. Rectifying properties improved at low temperatures as the reverse leakage decreased over six orders of magnitude without freeze-out in either material. Carrier concentration of ∼10
16
cm
−3
in the SiC remained stable down to 15 K, while accumulation charge decreased and depletion width increased in forward bias. The low barrier height of 0.08eV and absence of recombination-induced emission indicated majority carrier field emission as the dominant conduction mechanism.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.4712621</doi><oa>free_for_read</oa></addata></record> |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Vertical conduction mechanism of the epitaxial graphene/n-type 4H-SiC heterojunction at cryogenic temperatures |
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