Semipolar { n n ¯ 01 } InGaN/GaN ridge quantum wells ( n =1−3) fabricated by a regrowth technique

Semipolar { n n ¯ 01 } InGaN/GaN quantum wells (QWs) ( n =1−3) are fabricated on top of GaN microstructures, which consist of semipolar { 1 1 ¯ 01 } facets. Semipolar planes are obtained via regrowth of three-dimensional structures on (0001) GaN templates under controlled growth conditions. Compared to QWs on { 1 1 ¯ 01 } facets, { n n ¯ 01 } ridge QWs show an intense emission at ∼ 440nm. Time resolved photoluminescence reveals that the radiative lifetime of excitons in { n n ¯ 01 } InGaN ridge QWs at 13K is 310 ps, which is comparable to that in { 1 1 ¯ 01 } QWs. The estimated internal quantum efficiency at room temperature is as high as 57%.