Precise representation of the J =3° energy levels of the m p n d and m s m p 3 configurations in Si  i , Ge  i , and Sn  i using a perturbed coupled-channel model

Results given demonstrate the ability of an energy-dependent coupled-channel model which includes a perturbation function to represent precisely (σ≤0.30 cm−1) all mpnd J=3° energy levels observed experimentally below the lowest ionization threshold for Si i, Ge i, and Sn i. In this model all energy...

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Veröffentlicht in:	The Journal of chemical physics 1986-12, Vol.85 (11), p.6530-6535
Hauptverfasser:	Ginter, Dorothy S., Ginter, Marshall L., Brown, Charles M.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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