Behavior and effects of fluorine in annealed n+ polycrystalline silicon layers on silicon wafers

A comprehensive study is made of the behavior and effects of fluorine in n+-polysilicon layers. The polysilicon is deposited in a conventional low pressure chemical vapor deposition furnace on (100) silicon wafers, implanted with 1×1016 cm−2 F+ and 1×1016 cm−2 As+ and annealed at 850, 950, 1015, and...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2000-05, Vol.87 (10), p.7567-7578
Hauptverfasser: Marsh, C. D., Moiseiwitsch, N. E., Booker, G. R., Ashburn, P.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 7578
container_issue 10
container_start_page 7567
container_title Journal of applied physics
container_volume 87
creator Marsh, C. D.
Moiseiwitsch, N. E.
Booker, G. R.
Ashburn, P.
description A comprehensive study is made of the behavior and effects of fluorine in n+-polysilicon layers. The polysilicon is deposited in a conventional low pressure chemical vapor deposition furnace on (100) silicon wafers, implanted with 1×1016 cm−2 F+ and 1×1016 cm−2 As+ and annealed at 850, 950, 1015, and 1065 °C. Sheet resistance, transmission electron microscopy (TEM), and secondary ion mass spectroscopy are used to obtain quantitative data for the breakup of the interfacial oxide, the epitaxial regrowth of the polysilicon layer, and the fluorine and arsenic distributions. The fluorine significantly increases both the initial oxide breakup (∼8×) and the initial polysilicon regrowth. It also produces inclusions in the layer which can affect the subsequent polysilicon regrowth and the arsenic distributions. Three regrowth stages and two regrowth mechanisms are distinguished and interpreted, and a value of ∼6×10−11 cm2 s−1 is deduced for the effective diffusivity of fluorine in polysilicon at 950 °C. The amounts of regrowth determined by TEM are compared with the corresponding changes in sheet resistance. The thermal budgets required to produce polysilicon layer regrowths of 1% and 50%, important for the performance of polysilicon emitter bipolar transistors, are given. All the thermal budgets are lower when fluorine is present.
doi_str_mv 10.1063/1.373023
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_373023</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_373023</sourcerecordid><originalsourceid>FETCH-LOGICAL-c225t-7567a3e73437e9493ea486048155a631322e6eb8efda5479452cbcb2455c279f3</originalsourceid><addsrcrecordid>eNo9kEFLxDAUhIMouK6CPyFHQbomeUnTHHVxVVjwoueapi9YicmSVKX_3i4rngbmY4ZhCLnkbMVZDTd8BRqYgCOy4KwxlVaKHZMFY4JXjdHmlJyV8sEY5w2YBXm7w3f7PaRMbewpeo9uLDR56sNXykNEOsQZRbQBexqv6S6FyeWpjDaEPS5DGFyKNNgJ85yM_86P9bNzTk68DQUv_nRJXjf3L-vHavv88LS-3VZOCDXOM2ttATVI0GikAbSyqZlsuFK2Bg5CYI1dg763SmojlXCd64RUygltPCzJ1aHX5VRKRt_u8vBp89Ry1u6faXl7eAZ-ASYVVcI</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Behavior and effects of fluorine in annealed n+ polycrystalline silicon layers on silicon wafers</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Marsh, C. D. ; Moiseiwitsch, N. E. ; Booker, G. R. ; Ashburn, P.</creator><creatorcontrib>Marsh, C. D. ; Moiseiwitsch, N. E. ; Booker, G. R. ; Ashburn, P.</creatorcontrib><description>A comprehensive study is made of the behavior and effects of fluorine in n+-polysilicon layers. The polysilicon is deposited in a conventional low pressure chemical vapor deposition furnace on (100) silicon wafers, implanted with 1×1016 cm−2 F+ and 1×1016 cm−2 As+ and annealed at 850, 950, 1015, and 1065 °C. Sheet resistance, transmission electron microscopy (TEM), and secondary ion mass spectroscopy are used to obtain quantitative data for the breakup of the interfacial oxide, the epitaxial regrowth of the polysilicon layer, and the fluorine and arsenic distributions. The fluorine significantly increases both the initial oxide breakup (∼8×) and the initial polysilicon regrowth. It also produces inclusions in the layer which can affect the subsequent polysilicon regrowth and the arsenic distributions. Three regrowth stages and two regrowth mechanisms are distinguished and interpreted, and a value of ∼6×10−11 cm2 s−1 is deduced for the effective diffusivity of fluorine in polysilicon at 950 °C. The amounts of regrowth determined by TEM are compared with the corresponding changes in sheet resistance. The thermal budgets required to produce polysilicon layer regrowths of 1% and 50%, important for the performance of polysilicon emitter bipolar transistors, are given. All the thermal budgets are lower when fluorine is present.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.373023</identifier><language>eng</language><ispartof>Journal of applied physics, 2000-05, Vol.87 (10), p.7567-7578</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c225t-7567a3e73437e9493ea486048155a631322e6eb8efda5479452cbcb2455c279f3</citedby><cites>FETCH-LOGICAL-c225t-7567a3e73437e9493ea486048155a631322e6eb8efda5479452cbcb2455c279f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Marsh, C. D.</creatorcontrib><creatorcontrib>Moiseiwitsch, N. E.</creatorcontrib><creatorcontrib>Booker, G. R.</creatorcontrib><creatorcontrib>Ashburn, P.</creatorcontrib><title>Behavior and effects of fluorine in annealed n+ polycrystalline silicon layers on silicon wafers</title><title>Journal of applied physics</title><description>A comprehensive study is made of the behavior and effects of fluorine in n+-polysilicon layers. The polysilicon is deposited in a conventional low pressure chemical vapor deposition furnace on (100) silicon wafers, implanted with 1×1016 cm−2 F+ and 1×1016 cm−2 As+ and annealed at 850, 950, 1015, and 1065 °C. Sheet resistance, transmission electron microscopy (TEM), and secondary ion mass spectroscopy are used to obtain quantitative data for the breakup of the interfacial oxide, the epitaxial regrowth of the polysilicon layer, and the fluorine and arsenic distributions. The fluorine significantly increases both the initial oxide breakup (∼8×) and the initial polysilicon regrowth. It also produces inclusions in the layer which can affect the subsequent polysilicon regrowth and the arsenic distributions. Three regrowth stages and two regrowth mechanisms are distinguished and interpreted, and a value of ∼6×10−11 cm2 s−1 is deduced for the effective diffusivity of fluorine in polysilicon at 950 °C. The amounts of regrowth determined by TEM are compared with the corresponding changes in sheet resistance. The thermal budgets required to produce polysilicon layer regrowths of 1% and 50%, important for the performance of polysilicon emitter bipolar transistors, are given. All the thermal budgets are lower when fluorine is present.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNo9kEFLxDAUhIMouK6CPyFHQbomeUnTHHVxVVjwoueapi9YicmSVKX_3i4rngbmY4ZhCLnkbMVZDTd8BRqYgCOy4KwxlVaKHZMFY4JXjdHmlJyV8sEY5w2YBXm7w3f7PaRMbewpeo9uLDR56sNXykNEOsQZRbQBexqv6S6FyeWpjDaEPS5DGFyKNNgJ85yM_86P9bNzTk68DQUv_nRJXjf3L-vHavv88LS-3VZOCDXOM2ttATVI0GikAbSyqZlsuFK2Bg5CYI1dg763SmojlXCd64RUygltPCzJ1aHX5VRKRt_u8vBp89Ry1u6faXl7eAZ-ASYVVcI</recordid><startdate>20000515</startdate><enddate>20000515</enddate><creator>Marsh, C. D.</creator><creator>Moiseiwitsch, N. E.</creator><creator>Booker, G. R.</creator><creator>Ashburn, P.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20000515</creationdate><title>Behavior and effects of fluorine in annealed n+ polycrystalline silicon layers on silicon wafers</title><author>Marsh, C. D. ; Moiseiwitsch, N. E. ; Booker, G. R. ; Ashburn, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c225t-7567a3e73437e9493ea486048155a631322e6eb8efda5479452cbcb2455c279f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Marsh, C. D.</creatorcontrib><creatorcontrib>Moiseiwitsch, N. E.</creatorcontrib><creatorcontrib>Booker, G. R.</creatorcontrib><creatorcontrib>Ashburn, P.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Marsh, C. D.</au><au>Moiseiwitsch, N. E.</au><au>Booker, G. R.</au><au>Ashburn, P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Behavior and effects of fluorine in annealed n+ polycrystalline silicon layers on silicon wafers</atitle><jtitle>Journal of applied physics</jtitle><date>2000-05-15</date><risdate>2000</risdate><volume>87</volume><issue>10</issue><spage>7567</spage><epage>7578</epage><pages>7567-7578</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>A comprehensive study is made of the behavior and effects of fluorine in n+-polysilicon layers. The polysilicon is deposited in a conventional low pressure chemical vapor deposition furnace on (100) silicon wafers, implanted with 1×1016 cm−2 F+ and 1×1016 cm−2 As+ and annealed at 850, 950, 1015, and 1065 °C. Sheet resistance, transmission electron microscopy (TEM), and secondary ion mass spectroscopy are used to obtain quantitative data for the breakup of the interfacial oxide, the epitaxial regrowth of the polysilicon layer, and the fluorine and arsenic distributions. The fluorine significantly increases both the initial oxide breakup (∼8×) and the initial polysilicon regrowth. It also produces inclusions in the layer which can affect the subsequent polysilicon regrowth and the arsenic distributions. Three regrowth stages and two regrowth mechanisms are distinguished and interpreted, and a value of ∼6×10−11 cm2 s−1 is deduced for the effective diffusivity of fluorine in polysilicon at 950 °C. The amounts of regrowth determined by TEM are compared with the corresponding changes in sheet resistance. The thermal budgets required to produce polysilicon layer regrowths of 1% and 50%, important for the performance of polysilicon emitter bipolar transistors, are given. All the thermal budgets are lower when fluorine is present.</abstract><doi>10.1063/1.373023</doi><tpages>12</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0021-8979
ispartof Journal of applied physics, 2000-05, Vol.87 (10), p.7567-7578
issn 0021-8979
1089-7550
language eng
recordid cdi_crossref_primary_10_1063_1_373023
source AIP Journals Complete; AIP Digital Archive
title Behavior and effects of fluorine in annealed n+ polycrystalline silicon layers on silicon wafers
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T13%3A46%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Behavior%20and%20effects%20of%20fluorine%20in%20annealed%20n+%20polycrystalline%20silicon%20layers%20on%20silicon%20wafers&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Marsh,%20C.%20D.&rft.date=2000-05-15&rft.volume=87&rft.issue=10&rft.spage=7567&rft.epage=7578&rft.pages=7567-7578&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.373023&rft_dat=%3Ccrossref%3E10_1063_1_373023%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true