Spin dependent tunneling devices fabricated for magnetic random access memory applications using latching mode

Spin dependent tunneling (SDT) devices were fabricated as building blocks for magnetic random access memory (MRAM) applications using latching electronics. The basic SDT structure was NiFeCo/Al2O3/CoFe/IrMn deposited using rf diode sputtering. The SDT structures and the word and torque coils were pa...

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Veröffentlicht in:	Journal of applied physics 2000-05, Vol.87 (9), p.6385-6387
Hauptverfasser:	Wang, D., Tondra, M., Pohm, A. V., Nordman, C., Anderson, J., Daughton, J. M., Black, W. C.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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