Al concentration control of epitaxial AlGaN alloys and interface control of GaN/AlGaN quantum well structures

Al x Ga 1−x N alloys were grown by metalorganic chemical vapor deposition on c-plane sapphire substrates under various growth conditions. Both the Al concentration and the growth rate of AlGaN are strongly affected by gas-phase parasitic reaction between ammonia and group-III sources. As the ammonia...

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Veröffentlicht in:	Journal of applied physics 2000-01, Vol.87 (1), p.172-176
Hauptverfasser:	Choi, Sung Chul, Kim, Jong-Hee, Choi, Ji Youn, Lee, Kang Jae, Lim, Kee Young, Yang, Gye Mo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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