Dimension scaling of low frequency noise in the drain current of polycrystalline silicon thin-film transistors

Experimental results of low frequency noise in polycrystalline silicon thin-film transistors (polysilicon TFTs) with varying gate dimensions (constant gate width W and varying gate length L) are presented. The power spectral density of the drain current fluctuations SI was found to depend linearly o...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of applied physics 1999-12, Vol.86 (12), p.7083-7086
Hauptverfasser:	Angelis, C. T., Dimitriadis, C. A., Farmakis, F. V., Brini, J., Kamarinos, G., Miyasaka, M.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!