Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers

Inversion-layer mobility has been investigated in extremely thin silicon-on-insulator metal–oxide–semiconductor field-effect transistors with a silicon film thickness as low as 5 nm. The Poisson and Schrœdinger equations have been self-consistently solved to take into account inversion layer quantiz...

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Veröffentlicht in:	Journal of applied physics 1999-12, Vol.86 (11), p.6269-6275
Hauptverfasser:	Gámiz, F., Roldán, J. B., Cartujo-Cassinello, P., Carceller, J. E., López-Villanueva, J. A., Rodriguez, S.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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