Effect of annealing on Ge-doped SiO2 thin films

Thermal annealing effects on optical and structural properties of Ge-doped SiO2 thin films prepared by the chemical vapor deposition and flame hydrolysis deposition methods were investigated. The thin film prepared by the former method showed inhomogeneous Ge distribution, and Ge oxygen-deficient ce...

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Veröffentlicht in:	Journal of applied physics 1999-11, Vol.86 (9), p.5270-5273
Hauptverfasser:	Fujimaki, Makoto, Shimoto, Shigeyuki, Miyazaki, Nahoko, Ohki, Yoshimichi, Seol, Kwang Soo, Imamura, Kazuo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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