Low-resistance ohmic contacts to p -type GaN achieved by the oxidation of Ni/Au films
A contact has been developed to achieve a low specific contact resistance to p-type GaN. The contact consisted of a bi-layer Ni/Au film deposited on p-type GaN followed by heat treatment in air to transform the metallic Ni into NiO along with an amorphous Ni–Ga–O phase and large Au grains. A specifi...
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Veröffentlicht in: | Journal of applied physics 1999-10, Vol.86 (8), p.4491-4497 |
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container_title | Journal of applied physics |
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creator | Ho, Jin-Kuo Jong, Charng-Shyang Chiu, Chien C. Huang, Chao-Nien Shih, Kwang-Kuo Chen, Li-Chien Chen, Fu-Rong Kai, Ji-Jung |
description | A contact has been developed to achieve a low specific contact resistance to p-type GaN. The contact consisted of a bi-layer Ni/Au film deposited on p-type GaN followed by heat treatment in air to transform the metallic Ni into NiO along with an amorphous Ni–Ga–O phase and large Au grains. A specific contact resistance as low as 4.0×10−6 Ω cm2 was obtained at 500 °C. This low value was obtained by the optimization of Ni/Au film thickness and heat treatment temperatures. Below about 400 °C, Ni was not completely oxidized. On the other hand, at temperatures higher than about 600 °C, the specific contact resistance increased because the NiO detached from p-GaN and the amount of amorphous Ni–Ga–O phase formed was more than that of the sample annealed at 500 °C. The mechanism of obtaining low-resistance ohmic contacts for the oxidized Ni/Au films was explained with a model using energy band diagrams of the Au/p-NiO/p-GaN structure. |
doi_str_mv | 10.1063/1.371392 |
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The contact consisted of a bi-layer Ni/Au film deposited on p-type GaN followed by heat treatment in air to transform the metallic Ni into NiO along with an amorphous Ni–Ga–O phase and large Au grains. A specific contact resistance as low as 4.0×10−6 Ω cm2 was obtained at 500 °C. This low value was obtained by the optimization of Ni/Au film thickness and heat treatment temperatures. Below about 400 °C, Ni was not completely oxidized. On the other hand, at temperatures higher than about 600 °C, the specific contact resistance increased because the NiO detached from p-GaN and the amount of amorphous Ni–Ga–O phase formed was more than that of the sample annealed at 500 °C. The mechanism of obtaining low-resistance ohmic contacts for the oxidized Ni/Au films was explained with a model using energy band diagrams of the Au/p-NiO/p-GaN structure.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.371392</identifier><language>eng</language><ispartof>Journal of applied physics, 1999-10, Vol.86 (8), p.4491-4497</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-caa5257fe551b7c770c8abd08a6a3af0ecaba750ca317ee49a77e63126828dc53</citedby><cites>FETCH-LOGICAL-c291t-caa5257fe551b7c770c8abd08a6a3af0ecaba750ca317ee49a77e63126828dc53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Ho, Jin-Kuo</creatorcontrib><creatorcontrib>Jong, Charng-Shyang</creatorcontrib><creatorcontrib>Chiu, Chien C.</creatorcontrib><creatorcontrib>Huang, Chao-Nien</creatorcontrib><creatorcontrib>Shih, Kwang-Kuo</creatorcontrib><creatorcontrib>Chen, Li-Chien</creatorcontrib><creatorcontrib>Chen, Fu-Rong</creatorcontrib><creatorcontrib>Kai, Ji-Jung</creatorcontrib><title>Low-resistance ohmic contacts to p -type GaN achieved by the oxidation of Ni/Au films</title><title>Journal of applied physics</title><description>A contact has been developed to achieve a low specific contact resistance to p-type GaN. The contact consisted of a bi-layer Ni/Au film deposited on p-type GaN followed by heat treatment in air to transform the metallic Ni into NiO along with an amorphous Ni–Ga–O phase and large Au grains. A specific contact resistance as low as 4.0×10−6 Ω cm2 was obtained at 500 °C. This low value was obtained by the optimization of Ni/Au film thickness and heat treatment temperatures. Below about 400 °C, Ni was not completely oxidized. On the other hand, at temperatures higher than about 600 °C, the specific contact resistance increased because the NiO detached from p-GaN and the amount of amorphous Ni–Ga–O phase formed was more than that of the sample annealed at 500 °C. 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The contact consisted of a bi-layer Ni/Au film deposited on p-type GaN followed by heat treatment in air to transform the metallic Ni into NiO along with an amorphous Ni–Ga–O phase and large Au grains. A specific contact resistance as low as 4.0×10−6 Ω cm2 was obtained at 500 °C. This low value was obtained by the optimization of Ni/Au film thickness and heat treatment temperatures. Below about 400 °C, Ni was not completely oxidized. On the other hand, at temperatures higher than about 600 °C, the specific contact resistance increased because the NiO detached from p-GaN and the amount of amorphous Ni–Ga–O phase formed was more than that of the sample annealed at 500 °C. The mechanism of obtaining low-resistance ohmic contacts for the oxidized Ni/Au films was explained with a model using energy band diagrams of the Au/p-NiO/p-GaN structure.</abstract><doi>10.1063/1.371392</doi><tpages>7</tpages></addata></record> |
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title | Low-resistance ohmic contacts to p -type GaN achieved by the oxidation of Ni/Au films |
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