Low-resistance ohmic contacts to p -type GaN achieved by the oxidation of Ni/Au films

A contact has been developed to achieve a low specific contact resistance to p-type GaN. The contact consisted of a bi-layer Ni/Au film deposited on p-type GaN followed by heat treatment in air to transform the metallic Ni into NiO along with an amorphous Ni–Ga–O phase and large Au grains. A specifi...

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Veröffentlicht in:Journal of applied physics 1999-10, Vol.86 (8), p.4491-4497
Hauptverfasser: Ho, Jin-Kuo, Jong, Charng-Shyang, Chiu, Chien C., Huang, Chao-Nien, Shih, Kwang-Kuo, Chen, Li-Chien, Chen, Fu-Rong, Kai, Ji-Jung
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container_end_page 4497
container_issue 8
container_start_page 4491
container_title Journal of applied physics
container_volume 86
creator Ho, Jin-Kuo
Jong, Charng-Shyang
Chiu, Chien C.
Huang, Chao-Nien
Shih, Kwang-Kuo
Chen, Li-Chien
Chen, Fu-Rong
Kai, Ji-Jung
description A contact has been developed to achieve a low specific contact resistance to p-type GaN. The contact consisted of a bi-layer Ni/Au film deposited on p-type GaN followed by heat treatment in air to transform the metallic Ni into NiO along with an amorphous Ni–Ga–O phase and large Au grains. A specific contact resistance as low as 4.0×10−6 Ω cm2 was obtained at 500 °C. This low value was obtained by the optimization of Ni/Au film thickness and heat treatment temperatures. Below about 400 °C, Ni was not completely oxidized. On the other hand, at temperatures higher than about 600 °C, the specific contact resistance increased because the NiO detached from p-GaN and the amount of amorphous Ni–Ga–O phase formed was more than that of the sample annealed at 500 °C. The mechanism of obtaining low-resistance ohmic contacts for the oxidized Ni/Au films was explained with a model using energy band diagrams of the Au/p-NiO/p-GaN structure.
doi_str_mv 10.1063/1.371392
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title Low-resistance ohmic contacts to p -type GaN achieved by the oxidation of Ni/Au films
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