A finite-element study of strain fields in vertically aligned InAs islands in GaAs
Finite-element calculations are used to study strain fields in vertically aligned InAs islands in GaAs. Such strain fields are found to be quite different from those of uncovered islands and nearly insensitive to the position of the island in the stacking. The driving force for vertically self-organ...
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| Veröffentlicht in: | Journal of applied physics 1999-08, Vol.86 (4), p.1945-1950 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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