Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering

Very pure InAs epitaxial layers of high quantum efficiency have been grown by liquid phase epitaxy using Gd gettering of the growth solution. The residual carrier concentration was reduced to ∼6×1015 cm−3 and the peak photoluminescence intensity increased considerably (between 10 and 100 times) usin...

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Veröffentlicht in:	Journal of applied physics 1999-06, Vol.85 (12), p.8419-8422
Hauptverfasser:	Krier, A., Gao, H. H., Sherstnev, V. V.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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