Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Carrier concentration profiles of two-dimensional electron gases are investigated in wurtzite, Ga-face AlxGa1−xN/GaN/AlxGa1−xN and N-face GaN/AlxGa1−xN/GaN heterostructures used for the fabrication of field effect transistors. Analysis of the measured electron distributions in heterostructures with...
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| Veröffentlicht in: | Journal of applied physics 1999-03, Vol.85 (6), p.3222-3233 |
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| container_title | Journal of applied physics |
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| creator | Ambacher, O. Smart, J. Shealy, J. R. Weimann, N. G. Chu, K. Murphy, M. Schaff, W. J. Eastman, L. F. Dimitrov, R. Wittmer, L. Stutzmann, M. Rieger, W. Hilsenbeck, J. |
| description | Carrier concentration profiles of two-dimensional electron gases are investigated in wurtzite, Ga-face AlxGa1−xN/GaN/AlxGa1−xN and N-face GaN/AlxGa1−xN/GaN heterostructures used for the fabrication of field effect transistors. Analysis of the measured electron distributions in heterostructures with AlGaN barrier layers of different Al concentrations (0.15 |
| doi_str_mv | 10.1063/1.369664 |
| format | Article |
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R. ; Weimann, N. G. ; Chu, K. ; Murphy, M. ; Schaff, W. J. ; Eastman, L. F. ; Dimitrov, R. ; Wittmer, L. ; Stutzmann, M. ; Rieger, W. ; Hilsenbeck, J.</creator><creatorcontrib>Ambacher, O. ; Smart, J. ; Shealy, J. R. ; Weimann, N. G. ; Chu, K. ; Murphy, M. ; Schaff, W. J. ; Eastman, L. F. ; Dimitrov, R. ; Wittmer, L. ; Stutzmann, M. ; Rieger, W. ; Hilsenbeck, J.</creatorcontrib><description>Carrier concentration profiles of two-dimensional electron gases are investigated in wurtzite, Ga-face AlxGa1−xN/GaN/AlxGa1−xN and N-face GaN/AlxGa1−xN/GaN heterostructures used for the fabrication of field effect transistors. Analysis of the measured electron distributions in heterostructures with AlGaN barrier layers of different Al concentrations (0.15<x<0.5) and thickness between 20 and 65 nm demonstrate the important role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces. Characterization of the electrical properties of nominally undoped transistor structures reveals the presence of high sheet carrier concentrations, increasing from 6×1012 to 2×1013 cm−2 in the GaN channel with increasing Al-concentration from x=0.15 to 0.31. The observed high sheet carrier concentrations and strong confinement at specific interfaces of the N- and Ga-face pseudomorphic grown heterostructures can be explained as a consequence of interface charges induced by piezoelectric and spontaneous polarization effects.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.369664</identifier><language>eng</language><ispartof>Journal of applied physics, 1999-03, Vol.85 (6), p.3222-3233</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c157t-274251091306f4f62887e75cccffb7345905e8d25b65635bbdf1adc84dec30c3</citedby><cites>FETCH-LOGICAL-c157t-274251091306f4f62887e75cccffb7345905e8d25b65635bbdf1adc84dec30c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Ambacher, O.</creatorcontrib><creatorcontrib>Smart, J.</creatorcontrib><creatorcontrib>Shealy, J. 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Analysis of the measured electron distributions in heterostructures with AlGaN barrier layers of different Al concentrations (0.15<x<0.5) and thickness between 20 and 65 nm demonstrate the important role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces. Characterization of the electrical properties of nominally undoped transistor structures reveals the presence of high sheet carrier concentrations, increasing from 6×1012 to 2×1013 cm−2 in the GaN channel with increasing Al-concentration from x=0.15 to 0.31. The observed high sheet carrier concentrations and strong confinement at specific interfaces of the N- and Ga-face pseudomorphic grown heterostructures can be explained as a consequence of interface charges induced by piezoelectric and spontaneous polarization effects.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNotkM1KAzEcxIMoWKvgI-ToJW2y2XzssRStQqmX3pds8k-7sk2WZBdp38C3trYehrn8ZgYGoWdGZ4xKPmczLispyxs0YVRXRAlBb9GE0oIRXanqHj3k_EUpY5pXE_Sz_Y7EtQcIuY3BdBg6sEOKAe9Mhozb4EYLDjdHnPsYBhMgjhmb4HDfwile8dbiPnYmtScznGuw3Zu0u6TxhlzglSHeWMCLbmU287PwHgZIMQ9ptMOYID-iO2-6DE__PkXbt9ft8p2sP1cfy8WaWCbUQApVFoLRinEqfellobUCJay13jeKl6KiArQrRCOF5KJpnGfGWV06sJxaPkUv11p7Hs8JfN2n9mDSsWa0_nuwZvX1Qf4Ljbtleg</recordid><startdate>19990315</startdate><enddate>19990315</enddate><creator>Ambacher, O.</creator><creator>Smart, J.</creator><creator>Shealy, J. 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F.</au><au>Dimitrov, R.</au><au>Wittmer, L.</au><au>Stutzmann, M.</au><au>Rieger, W.</au><au>Hilsenbeck, J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures</atitle><jtitle>Journal of applied physics</jtitle><date>1999-03-15</date><risdate>1999</risdate><volume>85</volume><issue>6</issue><spage>3222</spage><epage>3233</epage><pages>3222-3233</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>Carrier concentration profiles of two-dimensional electron gases are investigated in wurtzite, Ga-face AlxGa1−xN/GaN/AlxGa1−xN and N-face GaN/AlxGa1−xN/GaN heterostructures used for the fabrication of field effect transistors. Analysis of the measured electron distributions in heterostructures with AlGaN barrier layers of different Al concentrations (0.15<x<0.5) and thickness between 20 and 65 nm demonstrate the important role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces. Characterization of the electrical properties of nominally undoped transistor structures reveals the presence of high sheet carrier concentrations, increasing from 6×1012 to 2×1013 cm−2 in the GaN channel with increasing Al-concentration from x=0.15 to 0.31. The observed high sheet carrier concentrations and strong confinement at specific interfaces of the N- and Ga-face pseudomorphic grown heterostructures can be explained as a consequence of interface charges induced by piezoelectric and spontaneous polarization effects.</abstract><doi>10.1063/1.369664</doi><tpages>12</tpages></addata></record> |
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| ispartof | Journal of applied physics, 1999-03, Vol.85 (6), p.3222-3233 |
| issn | 0021-8979 1089-7550 |
| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive |
| title | Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures |
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