Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor

A charge control model and a mobility model are developed for the Al–GaN/GaN high electron mobility transistor (HEMT) device. The model addresses issues of how piezoelectric effect and interface roughness influence device properties. We find that even small amount of interface roughness has very str...

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Veröffentlicht in:	Journal of applied physics 1999-01, Vol.85 (1), p.587-594
Hauptverfasser:	Zhang, Yifei, Singh, Jasprit
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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