Narrow band gap (1eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy
Heterojunction solar cell structures employing InGaAsSbN (Eg ∼ 1eV) base regions are grown lattice-matched to GaAs substrates using metalorganic vapor phase epitaxy. Room temperature (RT) photoluminescence (PL) measurements indicate a peak spectral emission at 1.04eV and carrier lifetimes of 471-576...
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| Veröffentlicht in: | Applied physics letters 2012-03, Vol.100 (12), p.121120-121120-4 |
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| container_end_page | 121120-4 |
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| container_issue | 12 |
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| container_title | Applied physics letters |
| container_volume | 100 |
| creator | Kim, T. W. Garrod, T. J. Kim, K. Lee, J. J. LaLumondiere, S. D. Sin, Y. Lotshaw, W. T. Moss, S. C. Kuech, T. F. Tatavarti, Rao Mawst, L. J. |
| description | Heterojunction solar cell structures employing InGaAsSbN (Eg ∼ 1eV) base regions are grown lattice-matched to GaAs substrates using metalorganic vapor phase epitaxy. Room temperature (RT) photoluminescence (PL) measurements indicate a peak spectral emission at 1.04eV and carrier lifetimes of 471-576 ps are measured at RT from these structures using time-resolved PL techniques. Fabricated devices without anti-reflection coating demonstrate a peak efficiency of 4.58% under AM1.5 direct illumination. Solar cells with a 250nm-thick InGaAsSbN base layer exhibit a 17% improvement in open circuit voltage (V
oc
), 14% improvement in fill factor, and 12% improvement in efficiency over the cells with a thicker (500nm-thick) base layer. |
| doi_str_mv | 10.1063/1.3693160 |
| format | Article |
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oc
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oc
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oc
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| source | American Institute of Physics (AIP) Journals; AIP_美国物理联合会期刊回溯（NSTL购买）; Alma/SFX Local Collection |
| title | Narrow band gap (1eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy |
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